JPS57118662A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57118662A
JPS57118662A JP56005702A JP570281A JPS57118662A JP S57118662 A JPS57118662 A JP S57118662A JP 56005702 A JP56005702 A JP 56005702A JP 570281 A JP570281 A JP 570281A JP S57118662 A JPS57118662 A JP S57118662A
Authority
JP
Japan
Prior art keywords
capacity
oxide film
interlayer insulating
section
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56005702A
Other languages
Japanese (ja)
Inventor
Kazuaki Miyata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56005702A priority Critical patent/JPS57118662A/en
Publication of JPS57118662A publication Critical patent/JPS57118662A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an MOSFET, the capacity only thereof is variable without changing its threshold value by improving its oxide film forming device. CONSTITUTION:A P type region 2 and a field oxide film 3 are formed on an N type silicon substrate 1, and after a gate oxide film 4 only has been formed, a gate polysilicon 6 and MOSFET source and drain 8 and 10 are formed. At this time, a substrate side P<+> region 15 of a capacity section is formed at the same time. Then, after an interlayer insulating film 11 has been deposited, the interlayer insulating film 11 of the capacity section is selectively etched using photoresist. On the section whereon a selective etching was performed, an oxide film 4' for the capacity section is newly formed, and the capacity is determined by controlling the thickness of the film. Then, a photoresist pattern is formed again, the interlayer insulating film 11 is selectively etched, a contact hole is opened, and then a wiring electrode 14 is formed.
JP56005702A 1981-01-16 1981-01-16 Manufacture of semiconductor device Pending JPS57118662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005702A JPS57118662A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005702A JPS57118662A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57118662A true JPS57118662A (en) 1982-07-23

Family

ID=11618436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005702A Pending JPS57118662A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118662A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150363A (en) * 1984-12-25 1986-07-09 Sony Corp Manufacture of semiconductor device
JPS61156763A (en) * 1984-12-27 1986-07-16 Sony Corp Manufacturing method of semiconductor device
JPS62108566A (en) * 1985-11-06 1987-05-19 Rohm Co Ltd Manufacture of semiconductor device
JPH01283861A (en) * 1988-05-10 1989-11-15 Fuji Electric Co Ltd Capacitor associated in integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150363A (en) * 1984-12-25 1986-07-09 Sony Corp Manufacture of semiconductor device
JPS61156763A (en) * 1984-12-27 1986-07-16 Sony Corp Manufacturing method of semiconductor device
JPS62108566A (en) * 1985-11-06 1987-05-19 Rohm Co Ltd Manufacture of semiconductor device
JPH01283861A (en) * 1988-05-10 1989-11-15 Fuji Electric Co Ltd Capacitor associated in integrated circuit device

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