JPS57173975A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57173975A
JPS57173975A JP5859681A JP5859681A JPS57173975A JP S57173975 A JPS57173975 A JP S57173975A JP 5859681 A JP5859681 A JP 5859681A JP 5859681 A JP5859681 A JP 5859681A JP S57173975 A JPS57173975 A JP S57173975A
Authority
JP
Japan
Prior art keywords
semiconductor device
mosi2
melting point
ion implantation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5859681A
Other languages
Japanese (ja)
Inventor
Masaki Momotomi
Hirosaku Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5859681A priority Critical patent/JPS57173975A/en
Publication of JPS57173975A publication Critical patent/JPS57173975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To allow the high speed operation of a semiconductor device, by increasing the impurity density of the interface between a high melting point metallic silicide layer and semiconductor layer more than that in the high melting point metallic silicide layer. CONSTITUTION:After forming a field oxide film 2 and Si oxide film 3 on a p type Si substrate 1 to open a contact hole 4, MoSi2 is evaporated. Thereafter, MoSi2 is selectively etched to form a gate electrode wiring layer 6 and source, drain taking-out electrode wiring layers 7, 8. Then, after forming a nitride film 9 as the stopper against As for ion implantation, n<+> source.drain 10 are formed by As ion implantation.
JP5859681A 1981-04-20 1981-04-20 Semiconductor device and manufacture thereof Pending JPS57173975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5859681A JPS57173975A (en) 1981-04-20 1981-04-20 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5859681A JPS57173975A (en) 1981-04-20 1981-04-20 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57173975A true JPS57173975A (en) 1982-10-26

Family

ID=13088872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5859681A Pending JPS57173975A (en) 1981-04-20 1981-04-20 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57173975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279617A (en) * 1985-10-03 1987-04-13 Hitachi Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279617A (en) * 1985-10-03 1987-04-13 Hitachi Ltd Semiconductor device and manufacture thereof

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