JPS56130948A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56130948A
JPS56130948A JP3446380A JP3446380A JPS56130948A JP S56130948 A JPS56130948 A JP S56130948A JP 3446380 A JP3446380 A JP 3446380A JP 3446380 A JP3446380 A JP 3446380A JP S56130948 A JPS56130948 A JP S56130948A
Authority
JP
Japan
Prior art keywords
gas
film
gate electrode
layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3446380A
Other languages
Japanese (ja)
Other versions
JPS6262468B2 (en
Inventor
Kohei Higuchi
Shibakazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3446380A priority Critical patent/JPS56130948A/en
Publication of JPS56130948A publication Critical patent/JPS56130948A/en
Publication of JPS6262468B2 publication Critical patent/JPS6262468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a gate electrode having small thickness, stable masking action and low resistance by forming an electrode material of high melting point metal at the lower layer and employing two-layer structure film in which high melting point metal nitride layer is laminated thereon. CONSTITUTION:An element isolating silicon oxide film 1 and a gate oxide film 2 are covered on a substrate Si, Mo is accumulated thereon by spattering process in Ar gas, and an Mo film 32 having a thickness of 2,000Angstrom is formed. N2 gas is introduced into the Ar gas in this state, and an Mo nitride 33 is evaporated in a thickness of 1,000Angstrom thereon. Thereafter, the two-layer metal is etched to form a gate electrode. With the two-layer structure gate electrode as a mask ion is implanted thereto to form source and drain regions 4, 4', an interlayer insulating film 6 is formed, a hold is perforated thereat, and a wire is formed with aluminum 7. Thus, a stable MOS type semiconductor element having self-matching capability and low resistance gate wire can be obtained.
JP3446380A 1980-03-18 1980-03-18 Semiconductor device Granted JPS56130948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3446380A JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3446380A JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130948A true JPS56130948A (en) 1981-10-14
JPS6262468B2 JPS6262468B2 (en) 1987-12-26

Family

ID=12414937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3446380A Granted JPS56130948A (en) 1980-03-18 1980-03-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130948A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088476A (en) * 1983-10-21 1985-05-18 Seiko Epson Corp Semiconductor device
JPS6154648A (en) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH025477A (en) * 1988-06-23 1990-01-10 Fujitsu Ltd Semiconductor device and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260690A (en) * 1989-03-31 1990-10-23 Matsushita Electric Ind Co Ltd Component fitting device of printed board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088476A (en) * 1983-10-21 1985-05-18 Seiko Epson Corp Semiconductor device
JPS6154648A (en) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH025477A (en) * 1988-06-23 1990-01-10 Fujitsu Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6262468B2 (en) 1987-12-26

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