JPS56167349A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56167349A JPS56167349A JP7029580A JP7029580A JPS56167349A JP S56167349 A JPS56167349 A JP S56167349A JP 7029580 A JP7029580 A JP 7029580A JP 7029580 A JP7029580 A JP 7029580A JP S56167349 A JPS56167349 A JP S56167349A
- Authority
- JP
- Japan
- Prior art keywords
- film
- accumulated
- silicide
- electrode
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To stabilize characteristic of an MOS device having electrode wirings of low resistance by a method wherein a metal silicide thin film having a high melting point is formed on a substrate or on an insulating film provided on the substrate, and a silicon oxide film is accumulated on the silicide thin film and oxidation treatment is performed. CONSTITUTION:The Mo silicide film 4, for example, accumulated on a gate film by sputtering is photoetched to form a gate electrode 4a of the MOSFET, for example. After source, drain diffusion layers 5 are formed by ion implantation, the CVD SiO2 film 6 is accumulated on the whole surface thereof. Then thermal oxidation treatment is performed to oxidize the surface of the silicide film 4a through the SiO2 film 6 to form an SiO2 film 7. Respective processes of accumulation of an interlayer film 8, formation of a contact hole, formation of an Al inside wiring 9 are performed in succession to complete the FET. Accordingly at the MOS circuit being the electrode thereof formed with the metal silicide having low resistance, inferior insulation and a leak current can be reduced, and characteristic thereof can be stabilized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7029580A JPS56167349A (en) | 1980-05-27 | 1980-05-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7029580A JPS56167349A (en) | 1980-05-27 | 1980-05-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56167349A true JPS56167349A (en) | 1981-12-23 |
Family
ID=13427322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7029580A Pending JPS56167349A (en) | 1980-05-27 | 1980-05-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167349A (en) |
-
1980
- 1980-05-27 JP JP7029580A patent/JPS56167349A/en active Pending
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