JPS5473584A - Semiconductor device and production of the same - Google Patents

Semiconductor device and production of the same

Info

Publication number
JPS5473584A
JPS5473584A JP14136377A JP14136377A JPS5473584A JP S5473584 A JPS5473584 A JP S5473584A JP 14136377 A JP14136377 A JP 14136377A JP 14136377 A JP14136377 A JP 14136377A JP S5473584 A JPS5473584 A JP S5473584A
Authority
JP
Japan
Prior art keywords
film
melting point
point metal
high melting
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14136377A
Other languages
Japanese (ja)
Other versions
JPS6011817B2 (en
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52141363A priority Critical patent/JPS6011817B2/en
Publication of JPS5473584A publication Critical patent/JPS5473584A/en
Publication of JPS6011817B2 publication Critical patent/JPS6011817B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent oxidation of high melting point metal films, reduce the leads between electrode wiring metals and form high melting point metal gates of low resistance by forming an anti-oxidizing film through heat treatment then oxidizing a polycrystalline semiconductor film thereby providing a second insulation film.
CONSTITUTION: Oxide films 14 are selectively forme don the surface of a silicon substrate 13 of one conductivity type of a semiconductor substrate except the portions for forming electrodes. Next, the portions where the surface is exposed are oxidized to form gate oxide films 15 and further Mo films 16 of a high melting point metal are deposited. Next, source and drain regions 17a, 17b of conductivity type opposite from that of the substrate are formed, thence windows 18 are opened in the film 15 of the regions 17a, 17b, after which a polycrystalline Si film 19 is deposited. Thereafter, the film 19 is oxidized in a high temperature steam atmosphere to form a SiO2 film 19' and further a MoSi2 film 16' which becomes oxidation prevention is formed on the surface of the Mo film 16. Thereafter, contact windows 18' are opened in the film 19' and an Al film is evaporated, after which the Al film is selectively removed to form wirings 20.
COPYRIGHT: (C)1979,JPO&Japio
JP52141363A 1977-11-24 1977-11-24 Manufacturing method of semiconductor device Expired JPS6011817B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52141363A JPS6011817B2 (en) 1977-11-24 1977-11-24 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52141363A JPS6011817B2 (en) 1977-11-24 1977-11-24 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5473584A true JPS5473584A (en) 1979-06-12
JPS6011817B2 JPS6011817B2 (en) 1985-03-28

Family

ID=15290229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52141363A Expired JPS6011817B2 (en) 1977-11-24 1977-11-24 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6011817B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041233A (en) * 1983-08-16 1985-03-04 Sony Corp Forming method for insulating film
JPS60221676A (en) * 1985-03-18 1985-11-06 株式会社日立製作所 Refrigerator
US5035544A (en) * 1989-05-19 1991-07-30 Mitsubishi Metal Corporation Insert clamped tool

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218262U (en) * 1985-07-19 1987-02-03

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877773A (en) * 1972-01-19 1973-10-19
JPS51118381A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877773A (en) * 1972-01-19 1973-10-19
JPS51118381A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconductor unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041233A (en) * 1983-08-16 1985-03-04 Sony Corp Forming method for insulating film
JPS60221676A (en) * 1985-03-18 1985-11-06 株式会社日立製作所 Refrigerator
US5035544A (en) * 1989-05-19 1991-07-30 Mitsubishi Metal Corporation Insert clamped tool

Also Published As

Publication number Publication date
JPS6011817B2 (en) 1985-03-28

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