GB1505165A - Composition of matter - Google Patents
Composition of matterInfo
- Publication number
- GB1505165A GB1505165A GB21488/75A GB2148875A GB1505165A GB 1505165 A GB1505165 A GB 1505165A GB 21488/75 A GB21488/75 A GB 21488/75A GB 2148875 A GB2148875 A GB 2148875A GB 1505165 A GB1505165 A GB 1505165A
- Authority
- GB
- United Kingdom
- Prior art keywords
- refractory metal
- oxidized product
- sputtered
- oxidation
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1505165 Oxide material for use in semiconductor devices RCA CORPORATION 20 May 1975 [13 June 1974] 21488/75 Heading H1K A novel material comprises the oxidized product of a composition consisting of Si and a refractory metal (e.g. Pt, Mo, W, Rh or Re) which reacts with Si to form a silicide. The Si/refractory metal composition comprises a layer sputtered on to a. substrate, e.g. of Si, glass, SiO2 or Si3N4 and, being conductive (to a degree determined by the substrate temperature during sputtering and by any subsequent annealing step), may constitute an electrode or a conductive track in an integrated circuit. The oxidized product thereof is insulating and may serve insulation, dielectric or masking functions. Suitable etchants therefor are disclosed. The oxidation step is preferably effected at 400-600‹ C., the oxygen content of the oxidizing atmosphere being lower at the higher temperatures in order to obtain a satisfactory oxidized product. All or part only of the thickness of the sputtered Si/refractory metal layer may be subjected to oxidation.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47904974A | 1974-06-13 | 1974-06-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1505165A true GB1505165A (en) | 1978-03-30 |
Family
ID=23902455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB21488/75A Expired GB1505165A (en) | 1974-06-13 | 1975-05-20 | Composition of matter |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5112773A (en) |
AU (1) | AU8195575A (en) |
BE (1) | BE830034A (en) |
DE (1) | DE2525482A1 (en) |
FR (1) | FR2274579A1 (en) |
GB (1) | GB1505165A (en) |
IN (1) | IN143383B (en) |
NL (1) | NL7507015A (en) |
SE (1) | SE7506733L (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
JPS5493990A (en) * | 1978-01-06 | 1979-07-25 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
DE3141567C2 (en) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Process for producing layers consisting of tantalum, tungsten or molybdenum at low temperatures and using these layers |
US4432035A (en) * | 1982-06-11 | 1984-02-14 | International Business Machines Corp. | Method of making high dielectric constant insulators and capacitors using same |
JPS596577A (en) * | 1982-07-05 | 1984-01-13 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS63265448A (en) * | 1987-11-27 | 1988-11-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of mos type semiconductor device |
GB9307846D0 (en) * | 1993-04-15 | 1993-06-02 | Secr Defence | Pyrothechnic material |
GB2291642B (en) * | 1993-04-15 | 1997-06-04 | Secr Defence | Pyrotechnic material |
DE10207130B4 (en) * | 2002-02-20 | 2007-09-27 | Infineon Technologies Ag | A method of manufacturing a device and device comprising a noble metal layer, a noble metal silicide layer and an oxidized silicide layer |
-
1975
- 1975-05-03 IN IN894/CAL/75A patent/IN143383B/en unknown
- 1975-05-20 GB GB21488/75A patent/GB1505165A/en not_active Expired
- 1975-06-07 DE DE19752525482 patent/DE2525482A1/en active Pending
- 1975-06-09 AU AU81955/75A patent/AU8195575A/en not_active Expired
- 1975-06-09 BE BE7000670A patent/BE830034A/en unknown
- 1975-06-11 FR FR7518277A patent/FR2274579A1/en not_active Withdrawn
- 1975-06-12 JP JP50071870A patent/JPS5112773A/ja active Pending
- 1975-06-12 SE SE7506733A patent/SE7506733L/en unknown
- 1975-06-12 NL NL7507015A patent/NL7507015A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139419A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
FR2274579A1 (en) | 1976-01-09 |
SE7506733L (en) | 1975-12-15 |
JPS5112773A (en) | 1976-01-31 |
NL7507015A (en) | 1975-12-16 |
AU8195575A (en) | 1976-12-16 |
BE830034A (en) | 1975-10-01 |
DE2525482A1 (en) | 1976-01-02 |
IN143383B (en) | 1977-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |