JPS6467938A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS6467938A JPS6467938A JP22396387A JP22396387A JPS6467938A JP S6467938 A JPS6467938 A JP S6467938A JP 22396387 A JP22396387 A JP 22396387A JP 22396387 A JP22396387 A JP 22396387A JP S6467938 A JPS6467938 A JP S6467938A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- sequentially
- substrate
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent crystal defects from generating in a semiconductor substrate near the end of a field insulating film at the time of thermal oxidation by thermally oxidizing it in an oxidative atmosphere containing at least phosphorus. CONSTITUTION:An SiO2 film 2, an Si3N4 film 3 are sequentially formed on a semiconductor substrate 1, the films 3, 2 are then sequentially etched to form an opening 4. Then, an Si3N4 film 5 and an SiO2 film 6 are sequentially formed on a whole surface. Thereafter, the insulating films 6, 5 are sequentially anisotropically etched to remain only on the sidewall of the opening 4, and with them as masks the substrate 1 is anisotropically etched to form a groove 1a. Then, with the films 3, 6 as oxide preventive films the substrate 1 is thermally oxidized in an oxidative atmosphere containing P. The formed field insulating film is formed of glass containing phosphorus, has a low melting point, a large fluidity, and alleviates a stress generated in the substrate near the end of the film, thereby preventing crystal defects from generating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22396387A JPS6467938A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22396387A JPS6467938A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467938A true JPS6467938A (en) | 1989-03-14 |
Family
ID=16806434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22396387A Pending JPS6467938A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467938A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374584A (en) * | 1992-07-10 | 1994-12-20 | Goldstar Electron Co. Ltd. | Method for isolating elements in a semiconductor chip |
| US5972778A (en) * | 1994-06-24 | 1999-10-26 | Nec Corporation | Method of fabricating semiconductor device |
| US6297130B1 (en) * | 1991-04-30 | 2001-10-02 | Texas Instruments Incorporated | Recessed, sidewall-sealed and sandwiched poly-buffered LOCOS isolation methods |
-
1987
- 1987-09-09 JP JP22396387A patent/JPS6467938A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6297130B1 (en) * | 1991-04-30 | 2001-10-02 | Texas Instruments Incorporated | Recessed, sidewall-sealed and sandwiched poly-buffered LOCOS isolation methods |
| US5374584A (en) * | 1992-07-10 | 1994-12-20 | Goldstar Electron Co. Ltd. | Method for isolating elements in a semiconductor chip |
| DE4320062C2 (en) * | 1992-07-10 | 2002-09-12 | Lg Semicon Co Ltd | Method for isolating individual elements in a semiconductor chip |
| US5972778A (en) * | 1994-06-24 | 1999-10-26 | Nec Corporation | Method of fabricating semiconductor device |
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