JPS5521192A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5521192A
JPS5521192A JP9531878A JP9531878A JPS5521192A JP S5521192 A JPS5521192 A JP S5521192A JP 9531878 A JP9531878 A JP 9531878A JP 9531878 A JP9531878 A JP 9531878A JP S5521192 A JPS5521192 A JP S5521192A
Authority
JP
Japan
Prior art keywords
insulating film
impurities
opening
opening section
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9531878A
Other languages
Japanese (ja)
Other versions
JPS5923468B2 (en
Inventor
Kazufumi Ogawa
Tadanaka Yoneda
Takao Chikamura
Shinji Fujiwara
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53095318A priority Critical patent/JPS5923468B2/en
Publication of JPS5521192A publication Critical patent/JPS5521192A/en
Publication of JPS5923468B2 publication Critical patent/JPS5923468B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: For eliminating stage at opening section, to make melt-flow in the atmosphere of impurities and to etch the whole surfaces at least of said opening section and peripheral section of said opening section.
CONSTITUTION: The low melting point glass insulating film 27 containing conductor-forming impurities is formed on a semiconductor substrate 25 and a contact opening is provided. Next, said substrate 25 is heat-treated in the oxidative atmosphere containing the same kind of impurities as that contained in said insulating film 27 for melt flow. Thereafter, a thin part over the whole range of said insulating film 29 formed at said contact opening is removed.
COPYRIGHT: (C)1980,JPO&Japio
JP53095318A 1978-08-03 1978-08-03 Manufacturing method of semiconductor device Expired JPS5923468B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53095318A JPS5923468B2 (en) 1978-08-03 1978-08-03 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53095318A JPS5923468B2 (en) 1978-08-03 1978-08-03 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5521192A true JPS5521192A (en) 1980-02-15
JPS5923468B2 JPS5923468B2 (en) 1984-06-02

Family

ID=14134390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53095318A Expired JPS5923468B2 (en) 1978-08-03 1978-08-03 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5923468B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630813A (en) * 1983-11-28 1986-12-23 Kabushiki Kaisha Toshiba Method of and device for detecting displacement of paper sheets
JPS6373539A (en) * 1986-09-16 1988-04-04 Nec Corp Manufacture of semiconductor device
JPS63220547A (en) * 1987-03-09 1988-09-13 Matsushita Electronics Corp Manufacture of semiconductor device
US4981809A (en) * 1987-08-10 1991-01-01 Sumitomo Electric Industries, Ltd. Method of forming a mask pattern for the production of transistor
US5538906A (en) * 1994-03-29 1996-07-23 Sharp Kabushiki Kaisha Process for producing mask ROM

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630813A (en) * 1983-11-28 1986-12-23 Kabushiki Kaisha Toshiba Method of and device for detecting displacement of paper sheets
JPS6373539A (en) * 1986-09-16 1988-04-04 Nec Corp Manufacture of semiconductor device
JPS63220547A (en) * 1987-03-09 1988-09-13 Matsushita Electronics Corp Manufacture of semiconductor device
US4981809A (en) * 1987-08-10 1991-01-01 Sumitomo Electric Industries, Ltd. Method of forming a mask pattern for the production of transistor
US5538906A (en) * 1994-03-29 1996-07-23 Sharp Kabushiki Kaisha Process for producing mask ROM

Also Published As

Publication number Publication date
JPS5923468B2 (en) 1984-06-02

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