JPS5732671A - Manufacture of mos type integrated circuit - Google Patents
Manufacture of mos type integrated circuitInfo
- Publication number
- JPS5732671A JPS5732671A JP10722280A JP10722280A JPS5732671A JP S5732671 A JPS5732671 A JP S5732671A JP 10722280 A JP10722280 A JP 10722280A JP 10722280 A JP10722280 A JP 10722280A JP S5732671 A JPS5732671 A JP S5732671A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- manufacture
- integrated circuit
- mos type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To manufacture of an MOS type integrated circuit having high reliability and high integration by preventing the stepwise disconnection and the oxidation of a metallic silicide. CONSTITUTION:A silicon oxidized film 2 and a silicon nitride 3 are sequentially formed on a silicon substrate 1. Thereafter, the silicon nitride 3 and the film 2 are etched and removed. With the silicon nitride and the film 2 as masks the substrate 1 is removed. In order to prevent the inversion phenomenon of a field region in this state boron ions are injected. Subsequently, a field oxidized film 4 is grown, the silicon nitride 3 and the film 4 are removed, and a gate oxidized film 5 is thereafter formed in a dry oxygen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10722280A JPS5732671A (en) | 1980-08-06 | 1980-08-06 | Manufacture of mos type integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10722280A JPS5732671A (en) | 1980-08-06 | 1980-08-06 | Manufacture of mos type integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732671A true JPS5732671A (en) | 1982-02-22 |
Family
ID=14453579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10722280A Pending JPS5732671A (en) | 1980-08-06 | 1980-08-06 | Manufacture of mos type integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732671A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634912U (en) * | 1992-09-11 | 1994-05-10 | 有限会社勝製作所 | Recycler for thermoplastic synthetic resin foam |
-
1980
- 1980-08-06 JP JP10722280A patent/JPS5732671A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634912U (en) * | 1992-09-11 | 1994-05-10 | 有限会社勝製作所 | Recycler for thermoplastic synthetic resin foam |
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