JPS5474383A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5474383A JPS5474383A JP14182077A JP14182077A JPS5474383A JP S5474383 A JPS5474383 A JP S5474383A JP 14182077 A JP14182077 A JP 14182077A JP 14182077 A JP14182077 A JP 14182077A JP S5474383 A JPS5474383 A JP S5474383A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- crystal silicon
- poly
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To improve the yield of semiconductors such as one transistor, one capacitor, memory, and cell by eliminating the need for the formation of an electrode contact window by etching an insulating film. CONSTITUTION:On the element formation part of semiconductor substrate 11, thin insulating film 12 is formed and on film 12, mask film 14 is formed which suppresses that storage-voltage applying poly-crystal silicon layer 13 and the insulating film become thick due to heat oxidation, Then, impurities are injected into the region determined by this mask film 14 to form impurity-treated regions 15 and 16. Then, insulating film 13' is formed on poly-crystal silicon film 13 through heat oxidation and after mask film 14 is removed, metal electrode wiring 17 is formed including the gate electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182077A JPS5474383A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182077A JPS5474383A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5474383A true JPS5474383A (en) | 1979-06-14 |
Family
ID=15300879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14182077A Pending JPS5474383A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5474383A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142675A (en) * | 1980-01-07 | 1981-11-07 | Texas Instruments Inc | Semiconductor memory and method of forming same |
-
1977
- 1977-11-26 JP JP14182077A patent/JPS5474383A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142675A (en) * | 1980-01-07 | 1981-11-07 | Texas Instruments Inc | Semiconductor memory and method of forming same |
JPH056981A (en) * | 1980-01-07 | 1993-01-14 | Texas Instr Inc <Ti> | Semiconductor memory |
JPH0554267B2 (en) * | 1980-01-07 | 1993-08-12 | Texas Instruments Inc |
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