JPS55107258A - Electrode construction for semiconductor element - Google Patents

Abstract

PURPOSE: To make keep sufficient adherence capacity even if severe heat treatment is applied during the manufacturing processes of a semiconductor device by interposing a layer of metallic silicon compounds between silicon and electrodes when forming metal electrodes for elements on a silicon semiconductor.

CONSTITUTION: An n⁺-type source region 16 and an n⁺-type drain region 17 are diffusion formed on a p-type silicon substrate 15, and on the substrate 15 between these regions, a gate insulating film 61 extending over the regions is coated. Next, the whole surface except the film 61 is covered with an insulating film 65 on the region 16 side and with an insulating film 66 on the region 17 side and openings are made on the region 16 and region 17. Then, on the film 61, a silicon gate 11 is coated, and on the gate and in the openings on the regions 16 and 17, metal electrodes 25∼27 are formed after coating spattering layers 35∼37 of wolfram silicide or molybdenum silicide under these electrodes. By so doing, adherence capacity and electric characteristics both become stable.

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