JPS56167360A - Diffused resistance element in semiconductor device - Google Patents
Diffused resistance element in semiconductor deviceInfo
- Publication number
- JPS56167360A JPS56167360A JP7057080A JP7057080A JPS56167360A JP S56167360 A JPS56167360 A JP S56167360A JP 7057080 A JP7057080 A JP 7057080A JP 7057080 A JP7057080 A JP 7057080A JP S56167360 A JPS56167360 A JP S56167360A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- controlling electrode
- resistance
- resistance element
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To compensate the expanding effect of a depletion layer as well as to improve the linearity of resistance for the subject resistance element by a method wherein a controlling electrode is provided on the surface of a diffused resistance region through the intermediary of an insulating film to be used for a controlling electrode, and one of the resistance terminal electrodes and the controlling electrode are connected. CONSTITUTION:For example, a p<-> layer 2 is selectively diffused on an n<--> type Si substrate 1 and a p<+> contact diffusion layers 3 and 4 are provided on both ends of the diffusion layer 2. On the surface of the diffusion layer 2 located between the diffusion layers 3 and 4, a controlling electrode 11 consisting of a polycrystalline Si, for example, is formed through the intermediary of an insulating film 10 to be used for the controlling electrode. On the entire surface of the electrode 11, an insulating film 13 is deposited and after apertures 14-16 have been provided, metal electrodes 17 and 18 are formed and used as a resistance element. The resistance element of the above constitution is used under the condition wherein a negative voltage is applied to the electrodes 18 as against the electrode 17. Through these procedures, the expansion of the depletion layer in the vicinity of a junction J due to application of a high tension voltage can be suppressed by the MOS effect of the controlling electrode and the resistance value can be maintained constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7057080A JPS56167360A (en) | 1980-05-26 | 1980-05-26 | Diffused resistance element in semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7057080A JPS56167360A (en) | 1980-05-26 | 1980-05-26 | Diffused resistance element in semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56167360A true JPS56167360A (en) | 1981-12-23 |
Family
ID=13435333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7057080A Pending JPS56167360A (en) | 1980-05-26 | 1980-05-26 | Diffused resistance element in semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167360A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454753A (en) * | 1987-08-26 | 1989-03-02 | Hitachi Ltd | Semiconductor resistor |
| JPH0287662A (en) * | 1988-09-26 | 1990-03-28 | Nec Ic Microcomput Syst Ltd | Semiconductor device |
| EP0881692A2 (en) * | 1994-12-13 | 1998-12-02 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of manufacturing the same |
| EP1184909A2 (en) * | 2000-08-30 | 2002-03-06 | Agere Systems Guardian Corporation | Method of manufacturing an integrated circuit |
| EP1184910A2 (en) * | 2000-08-30 | 2002-03-06 | Agere Systems Guardian Corporation | Field plated resistor with enhanced routing area thereover |
-
1980
- 1980-05-26 JP JP7057080A patent/JPS56167360A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454753A (en) * | 1987-08-26 | 1989-03-02 | Hitachi Ltd | Semiconductor resistor |
| JPH0287662A (en) * | 1988-09-26 | 1990-03-28 | Nec Ic Microcomput Syst Ltd | Semiconductor device |
| EP0881692A2 (en) * | 1994-12-13 | 1998-12-02 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of manufacturing the same |
| EP0881692A3 (en) * | 1994-12-13 | 1998-12-16 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of manufacturing the same |
| EP1184909A2 (en) * | 2000-08-30 | 2002-03-06 | Agere Systems Guardian Corporation | Method of manufacturing an integrated circuit |
| EP1184910A2 (en) * | 2000-08-30 | 2002-03-06 | Agere Systems Guardian Corporation | Field plated resistor with enhanced routing area thereover |
| EP1184909A3 (en) * | 2000-08-30 | 2004-10-13 | Agere Systems Guardian Corporation | Method of manufacturing an integrated circuit |
| EP1184910A3 (en) * | 2000-08-30 | 2004-10-13 | Agere Systems Guardian Corporation | Field plated resistor with enhanced routing area thereover |
| KR100870256B1 (en) * | 2000-08-30 | 2008-11-25 | 에이저 시스템즈 가디언 코포레이션 | Field Plated Resistor with Enhanced Routing Area Thereover |
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