JPS56133872A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56133872A
JPS56133872A JP3587680A JP3587680A JPS56133872A JP S56133872 A JPS56133872 A JP S56133872A JP 3587680 A JP3587680 A JP 3587680A JP 3587680 A JP3587680 A JP 3587680A JP S56133872 A JPS56133872 A JP S56133872A
Authority
JP
Japan
Prior art keywords
active layer
gate electrode
heat treatment
source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3587680A
Other languages
Japanese (ja)
Inventor
Kenichi Kikuchi
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3587680A priority Critical patent/JPS56133872A/en
Publication of JPS56133872A publication Critical patent/JPS56133872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To enable the pinchoff voltage to be readily set, by a method wherein a metal for forming a Schottky barrier is attached onto the active layer formed on a substrate, to form a gate electrode, and a heat treatment is applied in order to alloy the gate electrode metal with the active layer. CONSTITUTION:On a semiconductor substrate 10, an active layer 11 is formed, on which a source electrode 12 and a drain electrode 13 are formed. After the source and drain electrodes 12 and 13 have been alloyed, the whole surface is coated with platinum or the like by evaporation, which is patterned to form a gate electrode 14. Then, an externally applied voltage 18 corresponding to the pinchoff voltage to be set and a detector 19 are connected between the source and drain electrodes 12 and 13 to apply a heat treatment. On doing this, the gate electrode metal is reacted with the active layer 11 to be an alloy, so that the Schottky barrier shifts toward the substrate. Therefore, finishing the heat treatment at the moment a given pinchoff voltage has been obtained by the detector 19 permits the setting of the given pinchoff voltage value.
JP3587680A 1980-03-21 1980-03-21 Manufacture of semiconductor device Pending JPS56133872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3587680A JPS56133872A (en) 1980-03-21 1980-03-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3587680A JPS56133872A (en) 1980-03-21 1980-03-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56133872A true JPS56133872A (en) 1981-10-20

Family

ID=12454193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3587680A Pending JPS56133872A (en) 1980-03-21 1980-03-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56133872A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132977A (en) * 1982-02-02 1983-08-08 Toshiba Corp Preparation of schotkky gate type gaas field effect transistor
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPS61128568A (en) * 1984-11-27 1986-06-16 Yokogawa Electric Corp Charge transfer device
US9267704B1 (en) 2012-01-26 2016-02-23 Procom Heating, Inc. Portable heater housing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831884A (en) * 1971-08-26 1973-04-26
JPS4834455A (en) * 1971-09-06 1973-05-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831884A (en) * 1971-08-26 1973-04-26
JPS4834455A (en) * 1971-09-06 1973-05-18

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132977A (en) * 1982-02-02 1983-08-08 Toshiba Corp Preparation of schotkky gate type gaas field effect transistor
JPS6312391B2 (en) * 1982-02-02 1988-03-18 Tokyo Shibaura Electric Co
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPH0358177B2 (en) * 1982-02-22 1991-09-04 Tokyo Shibaura Electric Co
JPS61128568A (en) * 1984-11-27 1986-06-16 Yokogawa Electric Corp Charge transfer device
US9267704B1 (en) 2012-01-26 2016-02-23 Procom Heating, Inc. Portable heater housing

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