JPS5772384A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS5772384A
JPS5772384A JP55148155A JP14815580A JPS5772384A JP S5772384 A JPS5772384 A JP S5772384A JP 55148155 A JP55148155 A JP 55148155A JP 14815580 A JP14815580 A JP 14815580A JP S5772384 A JPS5772384 A JP S5772384A
Authority
JP
Japan
Prior art keywords
protective film
gate region
coated
etching
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148155A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55148155A priority Critical patent/JPS5772384A/en
Publication of JPS5772384A publication Critical patent/JPS5772384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To shorten a concave section of a gate region to a minute gate region by conducting the coating of a protective film and removal through etching having anisotropy in succession to a photo-etching process. CONSTITUTION:An active layer 42 on a semiconductor substrate 41 is coated with the protective film 43. An opening as the gate region with l1 gate length is formed to the protective film 43 through photo-etching. The protective film 44 is coated. The protective film 44 goes round and is coated even on a side wall of the opening section of the gate region at that time. When the protective film 44 is removed through the etching method having strong anisotropy at that time, the protective film 44 section coated on the side wall of the opening of the gate region is left, thus resulting in l2 gate length of the gate region opened. Accordingly, the gate length can be shortened accurately.
JP55148155A 1980-10-24 1980-10-24 Manufacture of field-effect transistor Pending JPS5772384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148155A JPS5772384A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148155A JPS5772384A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5772384A true JPS5772384A (en) 1982-05-06

Family

ID=15446485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148155A Pending JPS5772384A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5772384A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181068A (en) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS59205765A (en) * 1983-05-09 1984-11-21 Nec Corp Manufacture of semiconductor device
JPS60211875A (en) * 1984-04-05 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS6173377A (en) * 1984-09-18 1986-04-15 Sony Corp Manufacture of fet
JPS6181673A (en) * 1984-09-28 1986-04-25 Sony Corp Semiconductor device
JPS6190467A (en) * 1984-10-11 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
JPS61251080A (en) * 1985-04-27 1986-11-08 Fujitsu Ltd Manufacture of field effect transistor
JPS622572A (en) * 1985-04-26 1987-01-08 トライクイント　セミコンダクタ　インコ−ポレイテツド Making of fet gate
JPS62156876A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Semiconductor device
JPS6377163A (en) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp field effect transistor
JPS63174374A (en) * 1987-01-14 1988-07-18 Fujitsu Ltd Manufacture of field-effect semiconductor device
JPH01194366A (en) * 1988-01-28 1989-08-04 Nec Corp Manufacture of junction type field effect transistor
JPH02105540A (en) * 1988-10-14 1990-04-18 Nec Corp Manufacture of semiconductor device
US5264382A (en) * 1990-03-20 1993-11-23 Fujitsu Limited Method of producing semiconductor device using dummy gate structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444474A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Contact forming method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444474A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Contact forming method of semiconductor device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181068A (en) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS59205765A (en) * 1983-05-09 1984-11-21 Nec Corp Manufacture of semiconductor device
JPS60211875A (en) * 1984-04-05 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS6173377A (en) * 1984-09-18 1986-04-15 Sony Corp Manufacture of fet
JPS6181673A (en) * 1984-09-28 1986-04-25 Sony Corp Semiconductor device
JPS6190467A (en) * 1984-10-11 1986-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
JPS622572A (en) * 1985-04-26 1987-01-08 トライクイント　セミコンダクタ　インコ−ポレイテツド Making of fet gate
JPS61251080A (en) * 1985-04-27 1986-11-08 Fujitsu Ltd Manufacture of field effect transistor
JPS62156876A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Semiconductor device
JPS6377163A (en) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp field effect transistor
JPS63174374A (en) * 1987-01-14 1988-07-18 Fujitsu Ltd Manufacture of field-effect semiconductor device
JPH01194366A (en) * 1988-01-28 1989-08-04 Nec Corp Manufacture of junction type field effect transistor
JPH02105540A (en) * 1988-10-14 1990-04-18 Nec Corp Manufacture of semiconductor device
US5264382A (en) * 1990-03-20 1993-11-23 Fujitsu Limited Method of producing semiconductor device using dummy gate structure

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