JPS5772384A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS5772384A JPS5772384A JP14815580A JP14815580A JPS5772384A JP S5772384 A JPS5772384 A JP S5772384A JP 14815580 A JP14815580 A JP 14815580A JP 14815580 A JP14815580 A JP 14815580A JP S5772384 A JPS5772384 A JP S5772384A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- gate region
- coated
- etching
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001681 protective effect Effects 0.000 abstract 7
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To shorten a concave section of a gate region to a minute gate region by conducting the coating of a protective film and removal through etching having anisotropy in succession to a photo-etching process. CONSTITUTION:An active layer 42 on a semiconductor substrate 41 is coated with the protective film 43. An opening as the gate region with l1 gate length is formed to the protective film 43 through photo-etching. The protective film 44 is coated. The protective film 44 goes round and is coated even on a side wall of the opening section of the gate region at that time. When the protective film 44 is removed through the etching method having strong anisotropy at that time, the protective film 44 section coated on the side wall of the opening of the gate region is left, thus resulting in l2 gate length of the gate region opened. Accordingly, the gate length can be shortened accurately.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14815580A JPS5772384A (en) | 1980-10-24 | 1980-10-24 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14815580A JPS5772384A (en) | 1980-10-24 | 1980-10-24 | Manufacture of field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772384A true JPS5772384A (en) | 1982-05-06 |
Family
ID=15446485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14815580A Pending JPS5772384A (en) | 1980-10-24 | 1980-10-24 | Manufacture of field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772384A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181068A (en) * | 1983-03-31 | 1984-10-15 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPS59205765A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Manufacture of semiconductor device |
JPS60211875A (en) * | 1984-04-05 | 1985-10-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
JPS6173377A (en) * | 1984-09-18 | 1986-04-15 | Sony Corp | Manufacture of fet |
JPS6181673A (en) * | 1984-09-28 | 1986-04-25 | Sony Corp | Semiconductor device |
JPS6190467A (en) * | 1984-10-11 | 1986-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS61160972A (en) * | 1985-01-08 | 1986-07-21 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
JPS61251080A (en) * | 1985-04-27 | 1986-11-08 | Fujitsu Ltd | Manufacture of field effect transistor |
JPS622572A (en) * | 1985-04-26 | 1987-01-08 | トライクイント セミコンダクタ インコ−ポレイテツド | Making of fet gate |
JPS62156876A (en) * | 1985-12-28 | 1987-07-11 | Matsushita Electronics Corp | Semiconductor device |
JPS6377163A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Field-effect transistor |
JPS63174374A (en) * | 1987-01-14 | 1988-07-18 | Fujitsu Ltd | Manufacture of field-effect semiconductor device |
JPH01194366A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Manufacture of junction type field effect transistor |
JPH02105540A (en) * | 1988-10-14 | 1990-04-18 | Nec Corp | Manufacture of semiconductor device |
US5264382A (en) * | 1990-03-20 | 1993-11-23 | Fujitsu Limited | Method of producing semiconductor device using dummy gate structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444474A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Contact forming method of semiconductor device |
-
1980
- 1980-10-24 JP JP14815580A patent/JPS5772384A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444474A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Contact forming method of semiconductor device |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181068A (en) * | 1983-03-31 | 1984-10-15 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
JPH0212018B2 (en) * | 1983-03-31 | 1990-03-16 | Kogyo Gijutsuin | |
JPS59205765A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Manufacture of semiconductor device |
JPS60211875A (en) * | 1984-04-05 | 1985-10-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
JPS6173377A (en) * | 1984-09-18 | 1986-04-15 | Sony Corp | Manufacture of fet |
JPS6181673A (en) * | 1984-09-28 | 1986-04-25 | Sony Corp | Semiconductor device |
JPS6190467A (en) * | 1984-10-11 | 1986-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS61160972A (en) * | 1985-01-08 | 1986-07-21 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
JPS622572A (en) * | 1985-04-26 | 1987-01-08 | トライクイント セミコンダクタ インコ−ポレイテツド | Making of fet gate |
JPH0325931B2 (en) * | 1985-04-26 | 1991-04-09 | Toraikuinto Semikondakuta Inc | |
JPS61251080A (en) * | 1985-04-27 | 1986-11-08 | Fujitsu Ltd | Manufacture of field effect transistor |
JPS62156876A (en) * | 1985-12-28 | 1987-07-11 | Matsushita Electronics Corp | Semiconductor device |
JPS6377163A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Field-effect transistor |
JPS63174374A (en) * | 1987-01-14 | 1988-07-18 | Fujitsu Ltd | Manufacture of field-effect semiconductor device |
JPH01194366A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Manufacture of junction type field effect transistor |
JPH02105540A (en) * | 1988-10-14 | 1990-04-18 | Nec Corp | Manufacture of semiconductor device |
US5264382A (en) * | 1990-03-20 | 1993-11-23 | Fujitsu Limited | Method of producing semiconductor device using dummy gate structure |
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