JPS57100725A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57100725A
JPS57100725A JP17693280A JP17693280A JPS57100725A JP S57100725 A JPS57100725 A JP S57100725A JP 17693280 A JP17693280 A JP 17693280A JP 17693280 A JP17693280 A JP 17693280A JP S57100725 A JPS57100725 A JP S57100725A
Authority
JP
Japan
Prior art keywords
film
contacting hole
oxidized film
substrate
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17693280A
Other languages
Japanese (ja)
Inventor
Masahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17693280A priority Critical patent/JPS57100725A/en
Publication of JPS57100725A publication Critical patent/JPS57100725A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a large taper from being formed on a field oxidized film in a semiconductor device by increasing the contacting hole formed by etching at the first oxidized film on a substrate larger than that of the second oxidized film accumulated thereon. CONSTITUTION:A field oxidized film 202, a gate oxidized film 203 and a polysilicon gate 204 are formed on a substrate 201, a contacting hole is first formed at the film 203, and a contacting hole is further formed in size smaller than the previous contacting hole at a PSG film 205. According to this method, the size y' of the contacting hole of the film 205 can be suppressed to the difference of the thicknesses of the film 205 as compared with the size x' of the opening of the substrate.
JP17693280A 1980-12-15 1980-12-15 Semiconductor device Pending JPS57100725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17693280A JPS57100725A (en) 1980-12-15 1980-12-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17693280A JPS57100725A (en) 1980-12-15 1980-12-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100725A true JPS57100725A (en) 1982-06-23

Family

ID=16022258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17693280A Pending JPS57100725A (en) 1980-12-15 1980-12-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100725A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6459468B2 (en) 1999-04-20 2002-10-01 Nec Corporation LCD having particular spacing between spacers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6459468B2 (en) 1999-04-20 2002-10-01 Nec Corporation LCD having particular spacing between spacers

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