JPS575363A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS575363A JPS575363A JP7919680A JP7919680A JPS575363A JP S575363 A JPS575363 A JP S575363A JP 7919680 A JP7919680 A JP 7919680A JP 7919680 A JP7919680 A JP 7919680A JP S575363 A JPS575363 A JP S575363A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mos type
- semiconductor device
- oxidized film
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To form in high yield an MOS type semiconductor device highly integrated and increased in its performance by forming an aluminum gate MOS type element using self-alignment. CONSTITUTION:A thick thermally oxidized film 33 is grown on an Si substrate 31, and a hole is opened thereat. A thin thermally oxidized film 33' and a nitrided film 36 are formed in the hole, an insulating film on the source and drain regions is removed, and the surface of the substrate is exposed. Then, the source and the drain regions are diffused and formed, and an oxidized film 33'' is formed on the surface. Then, the nitrided film 36 of the gate region is removed, and a gate oxidized film 33'' is formed. Then, an electrode wire 35 is formed with aluminum depositing and selectively removing method. Since this employs a self-alignment, the MOS transistor can be formed in high accuracy and high yield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7919680A JPS575363A (en) | 1980-06-12 | 1980-06-12 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7919680A JPS575363A (en) | 1980-06-12 | 1980-06-12 | Manufacture of mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575363A true JPS575363A (en) | 1982-01-12 |
Family
ID=13683211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7919680A Pending JPS575363A (en) | 1980-06-12 | 1980-06-12 | Manufacture of mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575363A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63176004A (en) * | 1987-01-17 | 1988-07-20 | Mitsubishi Electric Corp | Horn antenna system |
-
1980
- 1980-06-12 JP JP7919680A patent/JPS575363A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63176004A (en) * | 1987-01-17 | 1988-07-20 | Mitsubishi Electric Corp | Horn antenna system |
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