JPS5553464A - Method for producing semiconductor element - Google Patents
Method for producing semiconductor elementInfo
- Publication number
- JPS5553464A JPS5553464A JP12619878A JP12619878A JPS5553464A JP S5553464 A JPS5553464 A JP S5553464A JP 12619878 A JP12619878 A JP 12619878A JP 12619878 A JP12619878 A JP 12619878A JP S5553464 A JPS5553464 A JP S5553464A
- Authority
- JP
- Japan
- Prior art keywords
- selectively
- coated
- insulative layer
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve high flequency characteristics of FET by removing an region for forming insulative layer adjacent to a gate region from the side selectively and thereafter forming the insulative layer and closely contacting upper and lower semiconductor region with this insulative layer.
CONSTITUTION: SiO24 is formed on n-type Si substrate by using Si3N4 mask and removed selectively and coated selectively with Si3N45. An opening 3 is etched to form a groove and coated with Si3N48 and opened to the bottom and etched again to form a groove 10. Then surfaces 13, 14 settles as crystalized surfaces (111), (110) and form a groove 11 selectively and fills with SiO2. Then Si3N45 is selectively coated and diffused to form P+-layer 18, n+-layer 20. Finally the film 5 is removed and Al electrodes 21, 22 are formed and n+ drain is diffused from other side of the substrate 1 to accomplish FET. By this construction, gate contact 23 is only exist near channel 24 and other parts are coated with insulative layer and consequently contact capacity Cgs, Cgd become small and flequency charactristics become good.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12619878A JPS5553464A (en) | 1978-10-16 | 1978-10-16 | Method for producing semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12619878A JPS5553464A (en) | 1978-10-16 | 1978-10-16 | Method for producing semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5553464A true JPS5553464A (en) | 1980-04-18 |
Family
ID=14929123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12619878A Pending JPS5553464A (en) | 1978-10-16 | 1978-10-16 | Method for producing semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553464A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4506283A (en) * | 1981-05-08 | 1985-03-19 | Rockwell International Corporation | Small area high value resistor with greatly reduced parasitic capacitance |
-
1978
- 1978-10-16 JP JP12619878A patent/JPS5553464A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4506283A (en) * | 1981-05-08 | 1985-03-19 | Rockwell International Corporation | Small area high value resistor with greatly reduced parasitic capacitance |
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