JPS5636167A - Junction-type field-effect semiconductor device and manufacture thereof - Google Patents
Junction-type field-effect semiconductor device and manufacture thereofInfo
- Publication number
- JPS5636167A JPS5636167A JP11041579A JP11041579A JPS5636167A JP S5636167 A JPS5636167 A JP S5636167A JP 11041579 A JP11041579 A JP 11041579A JP 11041579 A JP11041579 A JP 11041579A JP S5636167 A JPS5636167 A JP S5636167A
- Authority
- JP
- Japan
- Prior art keywords
- type
- gate
- drain
- source
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Abstract
PURPOSE:To reduce mutual conductance and the number of manufacturing steps, by previously making a p type layer, which is to become a gate, on an n type channel layer and effecting n<+> type source and drain diffusion to prescribe a gate region. CONSTITUTION:p<+> Type introducing portions 13 are produced in a p<+> type Si crystal substrate 11. An n type impurity doped layer 14 is produced. A p type impurity doped layer 15, which is to become a gate portion, is laminated on the doped layer 14. An opening is made in a surface film 16 of SiO2 to produce an n<+> type source 17 and an n<+> type drain 18. A p type layer between the source and the drain functions as a gate. After that, the surface film of SiO2 is slightly etched to expose the surfaces of the n<+> type source region and the n<+> type drain region in a self-alignment manner. A source electrode S and a drain electrode D are manufactured by evaporation coating of Al. A gate electrode G is led from the p<+> type substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11041579A JPS5636167A (en) | 1979-08-31 | 1979-08-31 | Junction-type field-effect semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11041579A JPS5636167A (en) | 1979-08-31 | 1979-08-31 | Junction-type field-effect semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5636167A true JPS5636167A (en) | 1981-04-09 |
Family
ID=14535191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11041579A Pending JPS5636167A (en) | 1979-08-31 | 1979-08-31 | Junction-type field-effect semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5636167A (en) |
-
1979
- 1979-08-31 JP JP11041579A patent/JPS5636167A/en active Pending
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