JPS5715471A - Junction type field effect semiconductor device and manufacture thereof - Google Patents
Junction type field effect semiconductor device and manufacture thereofInfo
- Publication number
- JPS5715471A JPS5715471A JP8920680A JP8920680A JPS5715471A JP S5715471 A JPS5715471 A JP S5715471A JP 8920680 A JP8920680 A JP 8920680A JP 8920680 A JP8920680 A JP 8920680A JP S5715471 A JPS5715471 A JP S5715471A
- Authority
- JP
- Japan
- Prior art keywords
- type
- source
- region
- layer
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain high gm without necessity of increasing the depth of a gate region by covering an epitaxial layer grown when the source and the drain regions of a J-FET are formed with an SiO2 film, opening a hole at the film and burying source and drain regions which contact with the epitaxial layer. CONSTITUTION:An n type layer 2 is epitaxially grown on a P<+> type Si substrate 1 becoming a substrate gate, and with an SiO2 film 6 as a mask a P<+> type isolation region 3 which contacts with the substrate 1 is diffused in the periphery of the layer 2. Then, it is photoetched, a window is opened at the center of the film 6, a shallow P<+> type gate region 4 is formed in the layer 2 by injecting P type impurity ions or depositing, and windows for source and drain contacting are opened at the films 6 disposed at both sides as by the ordinary way. Thereafter, an n type source and drain region 8 is selectively accumulated in the window, an extremely shallow n<+> type region 8a is formed on the lower surface, and source and drain electrodes 7 made of aluminum are mounted on the region 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8920680A JPS5715471A (en) | 1980-07-02 | 1980-07-02 | Junction type field effect semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8920680A JPS5715471A (en) | 1980-07-02 | 1980-07-02 | Junction type field effect semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5715471A true JPS5715471A (en) | 1982-01-26 |
Family
ID=13964237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8920680A Pending JPS5715471A (en) | 1980-07-02 | 1980-07-02 | Junction type field effect semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5715471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59173260U (en) * | 1983-04-12 | 1984-11-19 | パテント−トロイハント−ゲゼルシヤフト・フユ−ル・エレクトリツシエ・グリユ−ラムペン・ミツト・ベシユレンクテル・ハフツング | reflective lamp |
| JPS61153941A (en) * | 1984-12-14 | 1986-07-12 | ゼネラル・エレクリツク・カンパニイ | Resin-made skirt for mutual connection of metal cap and glass envelop of lamp |
-
1980
- 1980-07-02 JP JP8920680A patent/JPS5715471A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59173260U (en) * | 1983-04-12 | 1984-11-19 | パテント−トロイハント−ゲゼルシヤフト・フユ−ル・エレクトリツシエ・グリユ−ラムペン・ミツト・ベシユレンクテル・ハフツング | reflective lamp |
| JPH0436054Y2 (en) * | 1983-04-12 | 1992-08-26 | ||
| JPS61153941A (en) * | 1984-12-14 | 1986-07-12 | ゼネラル・エレクリツク・カンパニイ | Resin-made skirt for mutual connection of metal cap and glass envelop of lamp |
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