JPS5793562A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5793562A JPS5793562A JP16954880A JP16954880A JPS5793562A JP S5793562 A JPS5793562 A JP S5793562A JP 16954880 A JP16954880 A JP 16954880A JP 16954880 A JP16954880 A JP 16954880A JP S5793562 A JPS5793562 A JP S5793562A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- film
- base
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To largely reduce the area of occupying an element by overlapping an insulated gate FET on a bipolar transistor. CONSTITUTION:An N type epitaxial layer 3 is formed on a P type Si substrate 1, is isolated via a P<+> type isolation region 4, and a P type base region 5 and an N<+> type ohmic contact region 6 and formed. A part of an SiO2 film 7 on the surface is formed in a thin gate oxidized film 8, and an N<+> polysilicon gate 9 contacted with the base region 5 is formed under the film 8. A semiconductor layer 11 extending on the film 7 is formed in contact with the base 5 in the through hole 10, and an N<+> type source region 12, drain type region 13 and a P type channel region 14 forming an MOSFET are formed. The region 13 also acts as the collector region of the bipolar transistor. Thereafter, phosphorus silicate glass films 16, 17, and an emitter electrode 18 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16954880A JPS5793562A (en) | 1980-12-03 | 1980-12-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16954880A JPS5793562A (en) | 1980-12-03 | 1980-12-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5793562A true JPS5793562A (en) | 1982-06-10 |
Family
ID=15888509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16954880A Pending JPS5793562A (en) | 1980-12-03 | 1980-12-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5793562A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833869A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
| EP0105695A2 (en) * | 1982-09-30 | 1984-04-18 | Kabushiki Kaisha Toshiba | MOS/bipolar integrated circuit device and manufacturing method thereof |
| JP2008057179A (en) * | 2006-08-30 | 2008-03-13 | Miwa Lock Co Ltd | Detector for locking and unlocking operation frequency |
-
1980
- 1980-12-03 JP JP16954880A patent/JPS5793562A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833869A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
| EP0105695A2 (en) * | 1982-09-30 | 1984-04-18 | Kabushiki Kaisha Toshiba | MOS/bipolar integrated circuit device and manufacturing method thereof |
| JP2008057179A (en) * | 2006-08-30 | 2008-03-13 | Miwa Lock Co Ltd | Detector for locking and unlocking operation frequency |
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