JPS56140663A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56140663A
JPS56140663A JP4394980A JP4394980A JPS56140663A JP S56140663 A JPS56140663 A JP S56140663A JP 4394980 A JP4394980 A JP 4394980A JP 4394980 A JP4394980 A JP 4394980A JP S56140663 A JPS56140663 A JP S56140663A
Authority
JP
Japan
Prior art keywords
sio2
layer
decreased
diffused
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4394980A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kazutoshi Nagano
Seiji Onaka
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4394980A priority Critical patent/JPS56140663A/en
Publication of JPS56140663A publication Critical patent/JPS56140663A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To contrive the decrease of ON-resistance of a double diffused MOSFET in a cascode connection and to make the speed high by a method wherein a channel of J type FET is formed in drum shape by utilizing a transverse diffusion in a step region. CONSTITUTION:An N-epitaxal layer 2 is formed on an N<+> type Si substrate 1 and SiO2 7 is mounted to be etched. Then, the SiO2 7 is selectively mount also on the side surface of a convex 2' of the layer 2 and B-diffused to form P-layers 3, 3' and thereupon, parts 3a, 3'a are projected to the epitaxial layer. Thereafter, the P-layers are covered with SiO2 and opened a window to induce As and N type sources 4, 4' are formed in the layeres 3, 3'. The SiO2 on the side of the convex 2' is removed and a gate oxide film is formed to be attached with electrodes 5, 10. With this construction, since the ends of the gate 3, 3' can be thoroughly approached even by the shallow diffusion, the withstand is elevated, a P-N junction area is also decreased, a feedback capacity of an element is decreased and easily made high speed. In addition, the diffused layer is formed so shallow that the ion-resistance can thoroughly be decreased.
JP4394980A 1980-04-02 1980-04-02 Semiconductor device Pending JPS56140663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4394980A JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4394980A JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56140663A true JPS56140663A (en) 1981-11-04

Family

ID=12677951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4394980A Pending JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56140663A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697201A (en) * 1981-12-18 1987-09-29 Nissan Motor Company, Limited Power MOS FET with decreased resistance in the conducting state
JPS6380571A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation vertical mos-fet
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697201A (en) * 1981-12-18 1987-09-29 Nissan Motor Company, Limited Power MOS FET with decreased resistance in the conducting state
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet
JPS6380571A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation vertical mos-fet

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