JPS5721864A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5721864A JPS5721864A JP9574280A JP9574280A JPS5721864A JP S5721864 A JPS5721864 A JP S5721864A JP 9574280 A JP9574280 A JP 9574280A JP 9574280 A JP9574280 A JP 9574280A JP S5721864 A JPS5721864 A JP S5721864A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- source
- region
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To improve the high frequency characteristic of a semiconductor device of an MOSFET by overlapping the same conductive type region as a substrate in contact with source and drain regions. CONSTITUTION:An Mo gate 3 is formed via an SiO2 film 2 on the surface of p<+>p<->Si semiconductor substrate 1, n<+> type diffused region 4 is formed as source and drain on the surface of the Si substrate at the position interposed at both sides of the gate, and a p type diffused region 5 is overlapped on the p<-> type substrate region contacted with the n<+> type source and drain regions 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9574280A JPS5721864A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9574280A JPS5721864A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5721864A true JPS5721864A (en) | 1982-02-04 |
Family
ID=14145936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9574280A Pending JPS5721864A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721864A (en) |
-
1980
- 1980-07-15 JP JP9574280A patent/JPS5721864A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5681972A (en) | Mos type field effect transistor | |
| JPS5688363A (en) | Field effect transistor | |
| JPS56165359A (en) | Semiconductor device | |
| JPS5721864A (en) | Semiconductor device and manufacture thereof | |
| JPS56126977A (en) | Junction type field effect transistor | |
| JPS5691470A (en) | Semiconductor | |
| JPS5759384A (en) | Manufacture of longitudinal type insulated field effect semiconductor device | |
| JPS56165358A (en) | Semiconductor device | |
| JPS5660061A (en) | Semiconductor device | |
| JPS56140663A (en) | Semiconductor device | |
| JPS56116669A (en) | Field effect transistor | |
| JPS5366179A (en) | Semiconductor device | |
| JPS5793562A (en) | Semiconductor device | |
| JPS5421180A (en) | Semiconductor device | |
| JPS52139388A (en) | Mos type semiconductor device | |
| JPS5688366A (en) | Semiconductor device | |
| JPS52100877A (en) | Field effect transistor of junction type | |
| JPS5678157A (en) | Semiconductor device | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS57143867A (en) | Insulating gate type field-effect transistor and its manufacture | |
| JPS56115565A (en) | Semiconductor device | |
| JPS5745969A (en) | Mis type semiconductor integrated circuit device | |
| JPS5582460A (en) | Negative resistance semiconductor element | |
| JPS55133573A (en) | Insulated gate field effect transistor | |
| JPS53122383A (en) | Manufacture for semiconuctor logic circuit device of electrostatic induction type |