JPS5658260A - Darlington junction type transistor and production thereof - Google Patents

Darlington junction type transistor and production thereof

Info

Publication number
JPS5658260A
JPS5658260A JP13404079A JP13404079A JPS5658260A JP S5658260 A JPS5658260 A JP S5658260A JP 13404079 A JP13404079 A JP 13404079A JP 13404079 A JP13404079 A JP 13404079A JP S5658260 A JPS5658260 A JP S5658260A
Authority
JP
Japan
Prior art keywords
region
electrode
type
layer
darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13404079A
Other languages
Japanese (ja)
Inventor
Goro Hagio
Masahiro Ihara
Masami Yokozawa
Akira Wakana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP13404079A priority Critical patent/JPS5658260A/en
Publication of JPS5658260A publication Critical patent/JPS5658260A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a better switching characteristic by building up a switching diode with a common base region in transistors for driving and output use and a shallow diffused region provided in the base identical in the conduction type to the emitter region. CONSTITUTION:A diffusion is made into the surface of an N type Si substrate 11 to form a P type base layer 12 which is covered with an insulation film 0. With an opening etched through the film 0, the first and second circular N type emitter regions 13A and 13B are diffused into the layer 12. Then, a shallow N type region 18 is provided in the layer 12 between the regions and then, the region 13A for the driving transistor A is connected to the region 12 for the output transistor B with a circular first electrode 14. Positioned inside the electrode 14, the region 12 is connected to the region 18 serving as a cathode of a diode S with the second electrode 15'. In addition, the region 13B for the output transistor B is connected to the layer 12 thereinside with the third electrode 16 and the fourth electrode 17 is applied on the back of the substrate 11.
JP13404079A 1979-10-16 1979-10-16 Darlington junction type transistor and production thereof Pending JPS5658260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13404079A JPS5658260A (en) 1979-10-16 1979-10-16 Darlington junction type transistor and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13404079A JPS5658260A (en) 1979-10-16 1979-10-16 Darlington junction type transistor and production thereof

Publications (1)

Publication Number Publication Date
JPS5658260A true JPS5658260A (en) 1981-05-21

Family

ID=15118957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13404079A Pending JPS5658260A (en) 1979-10-16 1979-10-16 Darlington junction type transistor and production thereof

Country Status (1)

Country Link
JP (1) JPS5658260A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882562A (en) * 1981-11-10 1983-05-18 Matsushita Electronics Corp Semiconductor device
US4691221A (en) * 1984-09-27 1987-09-01 Siemens Aktiengesellschaft Monolithically integrated bipolar Darlington circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356976A (en) * 1976-11-02 1978-05-23 Matsushita Electronics Corp Darlington transistor
JPS55158664A (en) * 1979-05-29 1980-12-10 Thomson Csf Monolithic integrated structure and method of manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356976A (en) * 1976-11-02 1978-05-23 Matsushita Electronics Corp Darlington transistor
JPS55158664A (en) * 1979-05-29 1980-12-10 Thomson Csf Monolithic integrated structure and method of manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882562A (en) * 1981-11-10 1983-05-18 Matsushita Electronics Corp Semiconductor device
JPH0412031B2 (en) * 1981-11-10 1992-03-03 Matsushita Electronics Corp
US4691221A (en) * 1984-09-27 1987-09-01 Siemens Aktiengesellschaft Monolithically integrated bipolar Darlington circuit

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