JPS57122667A - Thyristor control circuit - Google Patents
Thyristor control circuitInfo
- Publication number
- JPS57122667A JPS57122667A JP20038381A JP20038381A JPS57122667A JP S57122667 A JPS57122667 A JP S57122667A JP 20038381 A JP20038381 A JP 20038381A JP 20038381 A JP20038381 A JP 20038381A JP S57122667 A JPS57122667 A JP S57122667A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- emitter
- base
- control
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Thyristor Switches And Gates (AREA)
- Power Conversion In General (AREA)
Abstract
PURPOSE:To simplify the outside circuit by a method wherein a transistor is formed in a control IC and used as a negative voltage blocking means and also used as a transistor. CONSTITUTION:A substrate type PnP transistor 41 is formed in a control IC 4 and driven by a control transistor 42. The base 43, the collector 44 and the emitter 45 of the transistor 41 are made of n-epitaxial layer, P type substrate and P type base diffusion layer respectively. Accordingly, the reverse bias is applied to the junction of the base 43 of the epitaxial layer and the emitter 45 of the base diffusion layer when the potential of the emitter 45 becomes negative. The withstand voltage of the junction of the epitaxial layer and the base diffusion layer is higher than that of the emitter of the usual transistor, so that this transistor 41 can also be utilized as a reverse voltage blocking diode without further special treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20038381A JPS57122667A (en) | 1981-12-11 | 1981-12-11 | Thyristor control circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20038381A JPS57122667A (en) | 1981-12-11 | 1981-12-11 | Thyristor control circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122667A true JPS57122667A (en) | 1982-07-30 |
Family
ID=16423401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20038381A Pending JPS57122667A (en) | 1981-12-11 | 1981-12-11 | Thyristor control circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122667A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03236625A (en) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | Drive circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825061U (en) * | 1971-08-02 | 1973-03-24 |
-
1981
- 1981-12-11 JP JP20038381A patent/JPS57122667A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825061U (en) * | 1971-08-02 | 1973-03-24 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03236625A (en) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | Drive circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES8301391A1 (en) | High-voltage semiconductor switch. | |
GB1243355A (en) | Improvements in and relating to semiconductor devices | |
DE3684555D1 (en) | METHOD FOR THE PRODUCTION OF SEMICONDUCTOR CIRCUITS TO FORM A BIPOLAR TRANSISTOR WITH EXTRINSIC BASE AREAS. | |
GB1452882A (en) | Zener diode for integrated circuits | |
JPS57122667A (en) | Thyristor control circuit | |
JPS5473585A (en) | Gate turn-off thyristor | |
GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
JPS5687360A (en) | Transistor device | |
GB1531735A (en) | Bipolar logic circuits | |
JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
JPS6447064A (en) | Semiconductor device | |
FR2457564A1 (en) | Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer | |
JPS5654062A (en) | Production of semiconductor device | |
JPS5297683A (en) | Semiconductor circuit device | |
JPS5735366A (en) | Semiconductor integrated circuit device | |
JPS6435951A (en) | Semiconductor device | |
JPS5658260A (en) | Darlington junction type transistor and production thereof | |
JPS57198657A (en) | Semiconductor device | |
JPS5533007A (en) | Semiconductor intergated circuit | |
JPS6482560A (en) | Lateral bipolar transistor | |
JPS57198665A (en) | Semiconductor device | |
JPS52109376A (en) | Semiconductor integrated circuit | |
JPS57201073A (en) | Semiconductor device | |
JPS5724557A (en) | Semiconductor device | |
FR2406894A1 (en) | Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel |