FR2457564A1 - Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer - Google Patents

Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer

Info

Publication number
FR2457564A1
FR2457564A1 FR7913205A FR7913205A FR2457564A1 FR 2457564 A1 FR2457564 A1 FR 2457564A1 FR 7913205 A FR7913205 A FR 7913205A FR 7913205 A FR7913205 A FR 7913205A FR 2457564 A1 FR2457564 A1 FR 2457564A1
Authority
FR
France
Prior art keywords
type
zones
pnp transistor
integrated circuit
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913205A
Other languages
French (fr)
Other versions
FR2457564B1 (en
Inventor
Christian Combes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7913205A priority Critical patent/FR2457564A1/en
Priority to IT12546/80A priority patent/IT1133421B/en
Priority to DE19803019898 priority patent/DE3019898A1/en
Publication of FR2457564A1 publication Critical patent/FR2457564A1/en
Application granted granted Critical
Publication of FR2457564B1 publication Critical patent/FR2457564B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

The pnp transistor suitable for the integrated bipolar circuit featuring a p-type substrate is ensured by the formation of an epitaxial n-type layer. The small area required for the transistor is coupled to its current capacity and its advantage is that no special step is necessary for its fabrication. The substrate I is implanted with p-type doping in zones 20-23 followed by epitaxial growth of n-type layer 2. The diffusion of p+ starts from the chip surface using a corresponding mask forming zones 25-29 which are shaped like rings around the pnp transistors. The zones are positioned so that the rising and downwardly directed diffusion fronts do not intersect. The first zone forms the collector and the second zone form the emitter.
FR7913205A 1979-05-23 1979-05-23 Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer Granted FR2457564A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7913205A FR2457564A1 (en) 1979-05-23 1979-05-23 Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer
IT12546/80A IT1133421B (en) 1979-05-23 1980-05-22 PNP TRANSISTOR FOR BIPOLAR INTEGRATED CIRCUIT AND ITS MANUFACTURING PROCEDURE
DE19803019898 DE3019898A1 (en) 1979-05-23 1980-05-23 PNP TRANSISTOR FOR BIPOLAR INTEGRATED CIRCUIT AND METHOD FOR PRODUCING THE TRANSISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913205A FR2457564A1 (en) 1979-05-23 1979-05-23 Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer

Publications (2)

Publication Number Publication Date
FR2457564A1 true FR2457564A1 (en) 1980-12-19
FR2457564B1 FR2457564B1 (en) 1983-06-10

Family

ID=9225817

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913205A Granted FR2457564A1 (en) 1979-05-23 1979-05-23 Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer

Country Status (3)

Country Link
DE (1) DE3019898A1 (en)
FR (1) FR2457564A1 (en)
IT (1) IT1133421B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592526A1 (en) * 1985-12-31 1987-07-03 Radiotechnique Compelec Integrated circuit containing a lateral transistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028146A1 (en) * 1969-01-11 1970-10-09 Philips Nv
FR2123118A1 (en) * 1971-01-13 1972-09-08 Radiotechnique Compelec
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
DE2651449A1 (en) * 1975-11-24 1977-05-26 Ibm PROCESS FOR MANUFACTURING COMPLEMENTARY TRANSISTORS IN INTEGRATED SEMICONDUCTOR TECHNOLOGY
FR2339254A1 (en) * 1976-01-23 1977-08-19 Itt PLANAR TRANSISTOR OF INTEGRATED INJECTION LOGIC CIRCUIT (I2L)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
CH446188A (en) * 1966-01-15 1967-10-31 Tagers Gmbh Method and device for detecting and separating the sheets of a sheet stack, as well as for transporting the individual sheets to a work station

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028146A1 (en) * 1969-01-11 1970-10-09 Philips Nv
FR2123118A1 (en) * 1971-01-13 1972-09-08 Radiotechnique Compelec
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
DE2651449A1 (en) * 1975-11-24 1977-05-26 Ibm PROCESS FOR MANUFACTURING COMPLEMENTARY TRANSISTORS IN INTEGRATED SEMICONDUCTOR TECHNOLOGY
FR2339254A1 (en) * 1976-01-23 1977-08-19 Itt PLANAR TRANSISTOR OF INTEGRATED INJECTION LOGIC CIRCUIT (I2L)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/70 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592526A1 (en) * 1985-12-31 1987-07-03 Radiotechnique Compelec Integrated circuit containing a lateral transistor

Also Published As

Publication number Publication date
DE3019898A1 (en) 1980-12-04
IT8012546A0 (en) 1980-05-22
FR2457564B1 (en) 1983-06-10
IT1133421B (en) 1986-07-09

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Legal Events

Date Code Title Description
ST Notification of lapse