JPS5463683A - Production of pn junction field effect transistor - Google Patents
Production of pn junction field effect transistorInfo
- Publication number
- JPS5463683A JPS5463683A JP12962177A JP12962177A JPS5463683A JP S5463683 A JPS5463683 A JP S5463683A JP 12962177 A JP12962177 A JP 12962177A JP 12962177 A JP12962177 A JP 12962177A JP S5463683 A JPS5463683 A JP S5463683A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- substrate
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make it easy to control the pinch off voltage and the saturation drain current by growing a N-type layer epitaxially on a P-type semiconductor substrate and doping selectively P-type impurity to the surface of this layer to provide a P--type region which reaches the substrate and forming a N-type channel region in this region by diffusion.
CONSTITUTION: N+-type buried region 2 and P+-type buried region 3 are formed on the surface of P-type Si substrate 1 by diffusion, and N-type layer 4 is grown epitaxially throughout all the surafec of them. Next, P+-type region 5 is diffused on the surface of layer 4 in the position corresponding to region 3 and is surrounded by ring or frame-shaped P+-type region 6B, and similarly, ring-shaped P+-type region 6A is formed correspondingly to region 2. After that, regions 6A and 6B are caused to reach substrate 1 by stretching diffusion and are made into P-type isolation regions 7A and 7B, and at the same time, N-type epi-layer 4 surrounded by region 7B is converted to P--type region 8. Next, N-type region 9 is diffused in region 8 and is used as the region for N channel J-FET formation, and epi-layer 4 surrounded by region 7A is used as a bipolar transistor.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12962177A JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12962177A JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5463683A true JPS5463683A (en) | 1979-05-22 |
JPS6136390B2 JPS6136390B2 (en) | 1986-08-18 |
Family
ID=15013992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12962177A Granted JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5463683A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60226165A (en) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS60226164A (en) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS60229361A (en) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS60229362A (en) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS6112057A (en) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | Semiconductor device |
-
1977
- 1977-10-31 JP JP12962177A patent/JPS5463683A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60226165A (en) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS60226164A (en) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPH0464184B2 (en) * | 1984-04-25 | 1992-10-14 | Sanyo Electric Co | |
JPS60229361A (en) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS60229362A (en) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | Semiconductor injection integrated logic circuit device |
JPS6112057A (en) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6136390B2 (en) | 1986-08-18 |
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