JPS5463683A - Production of pn junction field effect transistor - Google Patents

Production of pn junction field effect transistor

Info

Publication number
JPS5463683A
JPS5463683A JP12962177A JP12962177A JPS5463683A JP S5463683 A JPS5463683 A JP S5463683A JP 12962177 A JP12962177 A JP 12962177A JP 12962177 A JP12962177 A JP 12962177A JP S5463683 A JPS5463683 A JP S5463683A
Authority
JP
Japan
Prior art keywords
region
type
layer
substrate
surrounded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12962177A
Other languages
Japanese (ja)
Other versions
JPS6136390B2 (en
Inventor
Hideki Yasuoka
Motofumi Masaki
Akira Muramatsu
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12962177A priority Critical patent/JPS5463683A/en
Publication of JPS5463683A publication Critical patent/JPS5463683A/en
Publication of JPS6136390B2 publication Critical patent/JPS6136390B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make it easy to control the pinch off voltage and the saturation drain current by growing a N-type layer epitaxially on a P-type semiconductor substrate and doping selectively P-type impurity to the surface of this layer to provide a P--type region which reaches the substrate and forming a N-type channel region in this region by diffusion.
CONSTITUTION: N+-type buried region 2 and P+-type buried region 3 are formed on the surface of P-type Si substrate 1 by diffusion, and N-type layer 4 is grown epitaxially throughout all the surafec of them. Next, P+-type region 5 is diffused on the surface of layer 4 in the position corresponding to region 3 and is surrounded by ring or frame-shaped P+-type region 6B, and similarly, ring-shaped P+-type region 6A is formed correspondingly to region 2. After that, regions 6A and 6B are caused to reach substrate 1 by stretching diffusion and are made into P-type isolation regions 7A and 7B, and at the same time, N-type epi-layer 4 surrounded by region 7B is converted to P--type region 8. Next, N-type region 9 is diffused in region 8 and is used as the region for N channel J-FET formation, and epi-layer 4 surrounded by region 7A is used as a bipolar transistor.
COPYRIGHT: (C)1979,JPO&Japio
JP12962177A 1977-10-31 1977-10-31 Production of pn junction field effect transistor Granted JPS5463683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12962177A JPS5463683A (en) 1977-10-31 1977-10-31 Production of pn junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12962177A JPS5463683A (en) 1977-10-31 1977-10-31 Production of pn junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS5463683A true JPS5463683A (en) 1979-05-22
JPS6136390B2 JPS6136390B2 (en) 1986-08-18

Family

ID=15013992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12962177A Granted JPS5463683A (en) 1977-10-31 1977-10-31 Production of pn junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS5463683A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226165A (en) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS60226164A (en) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS60229361A (en) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS60229362A (en) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS6112057A (en) * 1984-06-26 1986-01-20 Sanyo Electric Co Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226165A (en) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS60226164A (en) * 1984-04-25 1985-11-11 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPH0464184B2 (en) * 1984-04-25 1992-10-14 Sanyo Electric Co
JPS60229361A (en) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS60229362A (en) * 1984-04-26 1985-11-14 Sanyo Electric Co Ltd Semiconductor injection integrated logic circuit device
JPS6112057A (en) * 1984-06-26 1986-01-20 Sanyo Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6136390B2 (en) 1986-08-18

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