JPS5787168A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5787168A
JPS5787168A JP16264480A JP16264480A JPS5787168A JP S5787168 A JPS5787168 A JP S5787168A JP 16264480 A JP16264480 A JP 16264480A JP 16264480 A JP16264480 A JP 16264480A JP S5787168 A JPS5787168 A JP S5787168A
Authority
JP
Japan
Prior art keywords
region
type
collector
base region
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16264480A
Other languages
Japanese (ja)
Inventor
Hiroshi Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16264480A priority Critical patent/JPS5787168A/en
Publication of JPS5787168A publication Critical patent/JPS5787168A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain the PNP horizontal type transistor on which Early's effect is prevented by a method wherein the N type layer, to be used as the base region, is epitaxially grown on a P type substrate, a P type emitter and collector region is provided on the N type layer, and a region having the impurity density deeper than that of the collector junction surface and higher than that of the base region, is provided in the base region located between the emitter and the collector regions. CONSTITUTION:An N type layer 2, to be turned to a base region, is epitaxially grown on a P<+> type Si substrate 1, and leaving a space from a P-type emitter region 4, an annular P type collector region 3 is formed by diffusion in such a manner that the region 3 is surrounding the region 4, and a PNP horizontal transistor is obtained. According to this constitution, an N<+> region 5, having the impurity density deeper than that of the collector junction surface and higher than that of the layer 2 of the base region, is provided between the regions 3 and 4. Through these procedures, the Early's effect can be lessened, and the variation of VBEO due to the fluctuation of VCC can almost be eliminated.
JP16264480A 1980-11-20 1980-11-20 Semiconductor device Pending JPS5787168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16264480A JPS5787168A (en) 1980-11-20 1980-11-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16264480A JPS5787168A (en) 1980-11-20 1980-11-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5787168A true JPS5787168A (en) 1982-05-31

Family

ID=15758531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16264480A Pending JPS5787168A (en) 1980-11-20 1980-11-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5787168A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993015A (en) * 2021-02-26 2021-06-18 西安微电子技术研究所 Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993015A (en) * 2021-02-26 2021-06-18 西安微电子技术研究所 Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof
CN112993015B (en) * 2021-02-26 2023-02-07 西安微电子技术研究所 Collector region double-diffusion-based high early voltage transverse PNP transistor and preparation method thereof

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