JPS5683968A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5683968A JPS5683968A JP16303279A JP16303279A JPS5683968A JP S5683968 A JPS5683968 A JP S5683968A JP 16303279 A JP16303279 A JP 16303279A JP 16303279 A JP16303279 A JP 16303279A JP S5683968 A JPS5683968 A JP S5683968A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- depth
- collector
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve a current amplification of a transistor by a method wherein the depth of a collector region is made larger than the depth of an emitter region in a lateral-type PNP transistor. CONSTITUTION:An N<+> type buried region 2 to be made a floating collector for preventing a parasitic PNP transistor action is diffusion-formed on a P<+> type semiconductor substrate 1, and an N<-> type layer 4 to be made a base region is made an epitaxial growth is separated insularly by a P<+> type region 3 which reaches the substrate 1, and within it, a P type emitter region 6, a P type collector region surrounding the region 6 and an N<+> type base contact region 7 located apart from the cellector region are respectively diffusion-formed. In this construction, the depth of the region 5 is made larger than that of the region 6 and a small number of carriers 8 injected into the region 6 are almost absorbed in the region 5. Thus, the leakage of the carriers 8 into the substrate 1 is reduced to effect improving the current mu-factor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16303279A JPS5683968A (en) | 1979-12-12 | 1979-12-12 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16303279A JPS5683968A (en) | 1979-12-12 | 1979-12-12 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5683968A true JPS5683968A (en) | 1981-07-08 |
Family
ID=15765883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16303279A Pending JPS5683968A (en) | 1979-12-12 | 1979-12-12 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5683968A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01261865A (en) * | 1988-04-13 | 1989-10-18 | Fuji Electric Co Ltd | Lateral type bipolar transistor |
-
1979
- 1979-12-12 JP JP16303279A patent/JPS5683968A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01261865A (en) * | 1988-04-13 | 1989-10-18 | Fuji Electric Co Ltd | Lateral type bipolar transistor |
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