JPS5683968A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5683968A
JPS5683968A JP16303279A JP16303279A JPS5683968A JP S5683968 A JPS5683968 A JP S5683968A JP 16303279 A JP16303279 A JP 16303279A JP 16303279 A JP16303279 A JP 16303279A JP S5683968 A JPS5683968 A JP S5683968A
Authority
JP
Japan
Prior art keywords
region
type
depth
collector
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16303279A
Other languages
Japanese (ja)
Inventor
Yusuke Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16303279A priority Critical patent/JPS5683968A/en
Publication of JPS5683968A publication Critical patent/JPS5683968A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve a current amplification of a transistor by a method wherein the depth of a collector region is made larger than the depth of an emitter region in a lateral-type PNP transistor. CONSTITUTION:An N<+> type buried region 2 to be made a floating collector for preventing a parasitic PNP transistor action is diffusion-formed on a P<+> type semiconductor substrate 1, and an N<-> type layer 4 to be made a base region is made an epitaxial growth is separated insularly by a P<+> type region 3 which reaches the substrate 1, and within it, a P type emitter region 6, a P type collector region surrounding the region 6 and an N<+> type base contact region 7 located apart from the cellector region are respectively diffusion-formed. In this construction, the depth of the region 5 is made larger than that of the region 6 and a small number of carriers 8 injected into the region 6 are almost absorbed in the region 5. Thus, the leakage of the carriers 8 into the substrate 1 is reduced to effect improving the current mu-factor.
JP16303279A 1979-12-12 1979-12-12 Semiconductor integrated circuit device Pending JPS5683968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16303279A JPS5683968A (en) 1979-12-12 1979-12-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16303279A JPS5683968A (en) 1979-12-12 1979-12-12 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5683968A true JPS5683968A (en) 1981-07-08

Family

ID=15765883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16303279A Pending JPS5683968A (en) 1979-12-12 1979-12-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5683968A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261865A (en) * 1988-04-13 1989-10-18 Fuji Electric Co Ltd Lateral type bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261865A (en) * 1988-04-13 1989-10-18 Fuji Electric Co Ltd Lateral type bipolar transistor

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