JPS5745274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5745274A
JPS5745274A JP55120188A JP12018880A JPS5745274A JP S5745274 A JPS5745274 A JP S5745274A JP 55120188 A JP55120188 A JP 55120188A JP 12018880 A JP12018880 A JP 12018880A JP S5745274 A JPS5745274 A JP S5745274A
Authority
JP
Japan
Prior art keywords
sbd
type
layer
buried layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55120188A
Other languages
Japanese (ja)
Other versions
JPS6356708B2 (en
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55120188A priority Critical patent/JPS5745274A/en
Publication of JPS5745274A publication Critical patent/JPS5745274A/en
Publication of JPS6356708B2 publication Critical patent/JPS6356708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enable a sufficient clamp effect of a Schottky barrier diode SBD by reducing the thickness between it and a buried layer to form the SBD at a part of a collector in a transistor with the SBD. CONSTITUTION:An n<+> type buried layer 2, an n type epitaxial layer 3 to be a collector region, a p type diffused layer 10 to be a base region and an n type emitter resion 11 are provided on a p type silicon substrate 1. An epitaxial layer 3a intended for the formation of a schottky barrier diode (SBD) is made less than the portion intended for the formation of a transistor Tr in the thickness between it and a lower buried layer 2 by sinking it from the surface side.
JP55120188A 1980-08-30 1980-08-30 Semiconductor device Granted JPS5745274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120188A JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745274A true JPS5745274A (en) 1982-03-15
JPS6356708B2 JPS6356708B2 (en) 1988-11-09

Family

ID=14780082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120188A Granted JPS5745274A (en) 1980-08-30 1980-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745274A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119762A (en) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Buried schottky clamp type transistor
JPS59177961A (en) * 1983-03-28 1984-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPH0194659A (en) * 1987-10-05 1989-04-13 Nec Corp Bipolar semiconductor integrated circuit device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5531384B2 (en) * 2007-12-14 2014-06-25 サンケン電気株式会社 Composite semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930320A (en) * 1972-07-14 1974-03-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930320A (en) * 1972-07-14 1974-03-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119762A (en) * 1982-12-20 1984-07-11 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Buried schottky clamp type transistor
JPS59177961A (en) * 1983-03-28 1984-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPH0194659A (en) * 1987-10-05 1989-04-13 Nec Corp Bipolar semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6356708B2 (en) 1988-11-09

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