JPS5785266A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5785266A
JPS5785266A JP16080580A JP16080580A JPS5785266A JP S5785266 A JPS5785266 A JP S5785266A JP 16080580 A JP16080580 A JP 16080580A JP 16080580 A JP16080580 A JP 16080580A JP S5785266 A JPS5785266 A JP S5785266A
Authority
JP
Japan
Prior art keywords
concentration
buried layer
zener diode
shaped
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16080580A
Other languages
Japanese (ja)
Inventor
Junichi Nakamura
Iwao Yamazaki
Seiji Hata
Hideyuki Tokumaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16080580A priority Critical patent/JPS5785266A/en
Publication of JPS5785266A publication Critical patent/JPS5785266A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve a noise characteristic and a characteristic of current-carrying capacity by forming a junction section to a surface layer of a high concentration impurity buried layer formed to semiconductor substrate. CONSTITUTION:A P<+> type anode region 14 having 3X10<20>cm<-3> surface boron concentration, which penetrates an N<-> region 13 from the surface of one part of the N<-> region and is deeply diffused and shaped, reaches the N<+> type buried layer 12 formed in 2X10<2>cm<-3> surface concentration, and a PN junction 124 is shaped to the surface with the buried layer. Since the Zener diode having this structure is formed in 2X10<21>cm<-3> surface concentration higher than the 10<18>- 10<19>cm<-3> surface concentration of the N type buried layer used for a monolithic IC at one stage, the concentration of the PN junction 124 section molded between the buied layer 12 and the anode region 14 is increased together, and the Zener diode having low breadkown voltage can be shaped.
JP16080580A 1980-11-17 1980-11-17 Zener diode Pending JPS5785266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16080580A JPS5785266A (en) 1980-11-17 1980-11-17 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16080580A JPS5785266A (en) 1980-11-17 1980-11-17 Zener diode

Publications (1)

Publication Number Publication Date
JPS5785266A true JPS5785266A (en) 1982-05-27

Family

ID=15722812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16080580A Pending JPS5785266A (en) 1980-11-17 1980-11-17 Zener diode

Country Status (1)

Country Link
JP (1) JPS5785266A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120478A (en) * 1984-11-16 1986-06-07 Fuji Electric Co Ltd Semiconductor integrated circuit
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US5583064A (en) * 1994-01-28 1996-12-10 Goldstar Electron Co. Ltd. Semiconductor device and process for formation thereof
EP1003218A1 (en) * 1998-11-21 2000-05-24 Micronas Intermetall GmbH Semiconductor devices comprising a Schottky diode and a diode having a highly doped region and corresponding manufacturing methods
US7019379B2 (en) * 2003-01-09 2006-03-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising voltage regulator element

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120478A (en) * 1984-11-16 1986-06-07 Fuji Electric Co Ltd Semiconductor integrated circuit
JPH0568864B2 (en) * 1984-11-16 1993-09-29 Fuji Electric Co Ltd
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device
JPH0413865B2 (en) * 1987-01-27 1992-03-11 Tokyo Shibaura Electric Co
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US5583064A (en) * 1994-01-28 1996-12-10 Goldstar Electron Co. Ltd. Semiconductor device and process for formation thereof
EP1003218A1 (en) * 1998-11-21 2000-05-24 Micronas Intermetall GmbH Semiconductor devices comprising a Schottky diode and a diode having a highly doped region and corresponding manufacturing methods
US6225653B1 (en) 1998-11-21 2001-05-01 Micronas Gmbh Semiconductor components and methods of manufacturing semiconductor components
US7019379B2 (en) * 2003-01-09 2006-03-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising voltage regulator element

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