JPS5615066A - Electrostatic induction type semiconductor logic circuit device - Google Patents

Electrostatic induction type semiconductor logic circuit device

Info

Publication number
JPS5615066A
JPS5615066A JP9078279A JP9078279A JPS5615066A JP S5615066 A JPS5615066 A JP S5615066A JP 9078279 A JP9078279 A JP 9078279A JP 9078279 A JP9078279 A JP 9078279A JP S5615066 A JPS5615066 A JP S5615066A
Authority
JP
Japan
Prior art keywords
type semiconductor
region
main surface
electrostatic induction
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9078279A
Other languages
Japanese (ja)
Inventor
Hidenobu Ishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9078279A priority Critical patent/JPS5615066A/en
Publication of JPS5615066A publication Critical patent/JPS5615066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To carry out the improvement in the integrating degree of the electrostatic induction type semiconductor logic circuit device made of longitudinal bipolar transistors and junction type field effect transistors by disposing the bipolar transistors longitudinally. CONSTITUTION:An N-type semiconductor region 17 is formed by a selective diffusion process at predetermined portion on one main surface on a low specific resistance P-type semiconductor substrate 14. An N-type semiconductor layer 12 is formed by epitaxial growth on one main surface of the substrate 14 and the region 17. A ring-shaped P-type semiconductor region 15 is formed at predetermined interval from the substrate 14 on one main surface of the layer 12, and an N-type semiconductor region 11' isolated at predetermined interval from the region 14 and an N- type semiconductor region 16 formed in shallower depth than the region 15 at predetermined interval from the region 15 on the exposed layer 12 from the opening A of the region 15 are formed on the one main surface of the layer 12. In this manner, a PNP-type transistor 101 and an N channel junction type electrostatic induction transistor 102 are formed.
JP9078279A 1979-07-16 1979-07-16 Electrostatic induction type semiconductor logic circuit device Pending JPS5615066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9078279A JPS5615066A (en) 1979-07-16 1979-07-16 Electrostatic induction type semiconductor logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9078279A JPS5615066A (en) 1979-07-16 1979-07-16 Electrostatic induction type semiconductor logic circuit device

Publications (1)

Publication Number Publication Date
JPS5615066A true JPS5615066A (en) 1981-02-13

Family

ID=14008164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9078279A Pending JPS5615066A (en) 1979-07-16 1979-07-16 Electrostatic induction type semiconductor logic circuit device

Country Status (1)

Country Link
JP (1) JPS5615066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142348A (en) * 1989-08-16 1992-08-25 Matsushita Electronics Corporation Lateral thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142348A (en) * 1989-08-16 1992-08-25 Matsushita Electronics Corporation Lateral thyristor

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