JPS562668A - Planar type thyristor - Google Patents

Planar type thyristor

Info

Publication number
JPS562668A
JPS562668A JP7849379A JP7849379A JPS562668A JP S562668 A JPS562668 A JP S562668A JP 7849379 A JP7849379 A JP 7849379A JP 7849379 A JP7849379 A JP 7849379A JP S562668 A JPS562668 A JP S562668A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
thyristor
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7849379A
Other languages
Japanese (ja)
Other versions
JPS621262B2 (en
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7849379A priority Critical patent/JPS562668A/en
Publication of JPS562668A publication Critical patent/JPS562668A/en
Publication of JPS621262B2 publication Critical patent/JPS621262B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Abstract

PURPOSE:To obtain stable operation of thyristor by a method wherein width and diffusion depth of a channel stopper which composes a planar type thyristor is chosen to be a specified value. CONSTITUTION:An N-type semiconductor substrate 2 built as a base is surrounded by a P-type region 3 which has a part that breaks through it, and at the center of the surrounded substrate 2 a P-type region 4 is formed by diffusion and within it an N<+>-type region 5 is formed. A thyristor is built by an N<+>-type stopper channel region 1 being formed by diffusion around the region 4, and by this constitution operational stability so depends on width W of the region 1 and diffusion depth Xj, that width of the region 1 is made to be W>=LP when LP is taken to be diffusion length of minority carriers in the substrate that acts as a base, and diffusion depth Xj of the region 1 is taken to be deeper as possible. Parastic bipolar transistors accompanied by surface inversion layers are made to have a lower current amplification gain, and hindrance capability against them is improved and higher operational stability is attained.
JP7849379A 1979-06-21 1979-06-21 Planar type thyristor Granted JPS562668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7849379A JPS562668A (en) 1979-06-21 1979-06-21 Planar type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7849379A JPS562668A (en) 1979-06-21 1979-06-21 Planar type thyristor

Publications (2)

Publication Number Publication Date
JPS562668A true JPS562668A (en) 1981-01-12
JPS621262B2 JPS621262B2 (en) 1987-01-12

Family

ID=13663493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7849379A Granted JPS562668A (en) 1979-06-21 1979-06-21 Planar type thyristor

Country Status (1)

Country Link
JP (1) JPS562668A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016613U (en) * 1983-07-13 1985-02-04 トヨタ自動車株式会社 Automobile door belt molding attachment device
JPH0436255U (en) * 1990-07-20 1992-03-26
JPH0465461U (en) * 1990-10-16 1992-06-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016613U (en) * 1983-07-13 1985-02-04 トヨタ自動車株式会社 Automobile door belt molding attachment device
JPH0436255U (en) * 1990-07-20 1992-03-26
JPH0465461U (en) * 1990-10-16 1992-06-08

Also Published As

Publication number Publication date
JPS621262B2 (en) 1987-01-12

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