JPS5595356A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5595356A
JPS5595356A JP16469678A JP16469678A JPS5595356A JP S5595356 A JPS5595356 A JP S5595356A JP 16469678 A JP16469678 A JP 16469678A JP 16469678 A JP16469678 A JP 16469678A JP S5595356 A JPS5595356 A JP S5595356A
Authority
JP
Japan
Prior art keywords
layer
type
region
climb
amplification factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16469678A
Other languages
Japanese (ja)
Inventor
Kazuo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16469678A priority Critical patent/JPS5595356A/en
Publication of JPS5595356A publication Critical patent/JPS5595356A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To control current amplification factor of a vertical type pnp-transistor, by forming a p<+>-type buried-in layer on a p-type semiconductor substrate by ion injection, and adjusting the climbing of the p<+>-type buried-in layer when an n-type layer is grown on it. CONSTITUTION:A p<+>-type buried-in layer 2 is diffused by ion injection in p<+>- type Si substrate 1, which is to become a collector. An n-type epitaxial layer 3 is grown on the entire surface, and at the same time, p<+>-type climb layer 4 is formed by causing layer 2 to climb in layer 3. Next, following the usual transistor manufacturing process, V-groove 4 reaching substrate 1 is cut, and this is filled with polycrystalline Si layer 8. An n<+>-type base region 10 and p<+>-type emitter region 11 are formed by diffusion in island region 6 separated from layer 3, and thereby a vertical pnp-transistor is formed. In this structure, since the current amplification factor is determined by the thickness of layer 3, the depth of region 11 and the amount of climb h of layer 4, an optimum amplification factor can be obtained by adjusting the dose region of layer 2, and temperature and time of heat treatment.
JP16469678A 1978-12-28 1978-12-28 Semiconductor device Pending JPS5595356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16469678A JPS5595356A (en) 1978-12-28 1978-12-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16469678A JPS5595356A (en) 1978-12-28 1978-12-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5595356A true JPS5595356A (en) 1980-07-19

Family

ID=15798122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16469678A Pending JPS5595356A (en) 1978-12-28 1978-12-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074983A (en) * 1973-09-10 1975-06-19
JPS5260078A (en) * 1975-11-12 1977-05-18 Matsushita Electronics Corp Pnp type transistor for semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074983A (en) * 1973-09-10 1975-06-19
JPS5260078A (en) * 1975-11-12 1977-05-18 Matsushita Electronics Corp Pnp type transistor for semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5539677A (en) Semiconductor device and its manufacturing
JPS54100273A (en) Memory circuit and variable resistance element
GB1467263A (en) Semiconductor device
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS55165669A (en) Bipolar-mos device
JPS5595356A (en) Semiconductor device
GB1388926A (en) Manufacture of silicon semiconductor devices
JPS5587429A (en) Manufacture of semiconductor device
JPS5312289A (en) Production of semiconductor device
GB863612A (en) Improvements in and relating to semi-conductive devices
JPS6482668A (en) Manufacture of bipolar transistor
JPS5762552A (en) Manufacture of semiconductor device
JPS5586182A (en) Manufacture of semiconductor device
JPS5624922A (en) Manufacture of semiconductor device
JPS57207383A (en) Phototransistor
JPS5479578A (en) Manufacture of semiconductor device
JPS57133673A (en) Semiconductor device
JPS5621366A (en) Manufacture of semiconductor device
JPS55163873A (en) Manufacture of semiconductor device
JPS5394778A (en) Manufacture of semiconductor device
JPS5732650A (en) Semiconductor device
JPS5586152A (en) Manufacture of semiconductor device
JPS6425566A (en) Manufacture of semiconductor integrated circuit
JPS54156489A (en) Semiconductor device and its manufacture
JPS5491079A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041207

A601 Written request for extension of time

Effective date: 20050307

Free format text: JAPANESE INTERMEDIATE CODE: A601

A602 Written permission of extension of time

Effective date: 20050418

Free format text: JAPANESE INTERMEDIATE CODE: A602

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050607

A02 Decision of refusal

Effective date: 20060117

Free format text: JAPANESE INTERMEDIATE CODE: A02

A521 Written amendment

Effective date: 20060418

Free format text: JAPANESE INTERMEDIATE CODE: A523

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20060511

A912 Removal of reconsideration by examiner before appeal (zenchi)

Effective date: 20060727

Free format text: JAPANESE INTERMEDIATE CODE: A912

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080220

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080226

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080321

A602 Written permission of extension of time

Effective date: 20080327

Free format text: JAPANESE INTERMEDIATE CODE: A602