JPS5394778A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5394778A
JPS5394778A JP869677A JP869677A JPS5394778A JP S5394778 A JPS5394778 A JP S5394778A JP 869677 A JP869677 A JP 869677A JP 869677 A JP869677 A JP 869677A JP S5394778 A JPS5394778 A JP S5394778A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
type
diffused
simplify
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP869677A
Other languages
Japanese (ja)
Other versions
JPS5733869B2 (en
Inventor
Tadashi Utagawa
Tsuneo Tsukagoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP869677A priority Critical patent/JPS5394778A/en
Publication of JPS5394778A publication Critical patent/JPS5394778A/en
Publication of JPS5733869B2 publication Critical patent/JPS5733869B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To simplify the control of the impurity density and thickness of a diffusion layer by using the ternary alloy of Ga, Ge and Sb as a diffusing source when P-type and N-type impurities are diffused on a N-type Si substrate to form the four-layer semiconductor device.
JP869677A 1977-01-31 1977-01-31 Manufacture of semiconductor device Granted JPS5394778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP869677A JPS5394778A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP869677A JPS5394778A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5394778A true JPS5394778A (en) 1978-08-19
JPS5733869B2 JPS5733869B2 (en) 1982-07-20

Family

ID=11700074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP869677A Granted JPS5394778A (en) 1977-01-31 1977-01-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5394778A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114761A (en) * 1984-06-29 1986-01-22 Mitsuo Kusano Manufacture of gate turn-off thyristor
US5696034A (en) * 1994-08-31 1997-12-09 Shin-Etsu Handotai Co., Ltd. Method for producing semiconductor substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951961U (en) * 1982-09-29 1984-04-05 株式会社クボタ door lock device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983377A (en) * 1972-12-13 1974-08-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983377A (en) * 1972-12-13 1974-08-10

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114761A (en) * 1984-06-29 1986-01-22 Mitsuo Kusano Manufacture of gate turn-off thyristor
US5696034A (en) * 1994-08-31 1997-12-09 Shin-Etsu Handotai Co., Ltd. Method for producing semiconductor substrate

Also Published As

Publication number Publication date
JPS5733869B2 (en) 1982-07-20

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Legal Events

Date Code Title Description
A762 Written abandonment of application

Effective date: 20040226

Free format text: JAPANESE INTERMEDIATE CODE: A762