JPS5449087A - Manufacture of photo semiconductor device - Google Patents

Manufacture of photo semiconductor device

Info

Publication number
JPS5449087A
JPS5449087A JP11621077A JP11621077A JPS5449087A JP S5449087 A JPS5449087 A JP S5449087A JP 11621077 A JP11621077 A JP 11621077A JP 11621077 A JP11621077 A JP 11621077A JP S5449087 A JPS5449087 A JP S5449087A
Authority
JP
Japan
Prior art keywords
layer
manufacture
layers
collector
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11621077A
Other languages
Japanese (ja)
Inventor
Toshibumi Yoshikawa
Hitoshi Kawanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11621077A priority Critical patent/JPS5449087A/en
Publication of JPS5449087A publication Critical patent/JPS5449087A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To manufacture a device with infrared sensitivity improved by making a collector layer thick while keeping small the saturation voltage of a transistor by using impurities large in diffusion coefficient.
CONSTITUTION: To the selected area of N- layer 5, N-type impurities large in diffusion coefficient are diffused to form N+ layer 7 against N layer 6. On layer 5, N- layer 8 is epitaxy-formed, and P-type base 9 and N+-type emitter 10 are formed. The diffusion of layers 9 and 10 is made from layers 7 to 8, and the collector series resistance is small because of layer 7. In this way, base layer 9 is made thin and thickness of low-conductive layers 5 and 8 of the collector part is made large, so that the infrared side can also be given photo sensitivity
COPYRIGHT: (C)1979,JPO&Japio
JP11621077A 1977-09-26 1977-09-26 Manufacture of photo semiconductor device Pending JPS5449087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11621077A JPS5449087A (en) 1977-09-26 1977-09-26 Manufacture of photo semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11621077A JPS5449087A (en) 1977-09-26 1977-09-26 Manufacture of photo semiconductor device

Publications (1)

Publication Number Publication Date
JPS5449087A true JPS5449087A (en) 1979-04-18

Family

ID=14681556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11621077A Pending JPS5449087A (en) 1977-09-26 1977-09-26 Manufacture of photo semiconductor device

Country Status (1)

Country Link
JP (1) JPS5449087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207383A (en) * 1981-06-15 1982-12-20 Nippon Telegr & Teleph Corp <Ntt> Phototransistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207383A (en) * 1981-06-15 1982-12-20 Nippon Telegr & Teleph Corp <Ntt> Phototransistor

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