JPS5449087A - Manufacture of photo semiconductor device - Google Patents
Manufacture of photo semiconductor deviceInfo
- Publication number
- JPS5449087A JPS5449087A JP11621077A JP11621077A JPS5449087A JP S5449087 A JPS5449087 A JP S5449087A JP 11621077 A JP11621077 A JP 11621077A JP 11621077 A JP11621077 A JP 11621077A JP S5449087 A JPS5449087 A JP S5449087A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacture
- layers
- collector
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To manufacture a device with infrared sensitivity improved by making a collector layer thick while keeping small the saturation voltage of a transistor by using impurities large in diffusion coefficient.
CONSTITUTION: To the selected area of N- layer 5, N-type impurities large in diffusion coefficient are diffused to form N+ layer 7 against N layer 6. On layer 5, N- layer 8 is epitaxy-formed, and P-type base 9 and N+-type emitter 10 are formed. The diffusion of layers 9 and 10 is made from layers 7 to 8, and the collector series resistance is small because of layer 7. In this way, base layer 9 is made thin and thickness of low-conductive layers 5 and 8 of the collector part is made large, so that the infrared side can also be given photo sensitivity
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11621077A JPS5449087A (en) | 1977-09-26 | 1977-09-26 | Manufacture of photo semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11621077A JPS5449087A (en) | 1977-09-26 | 1977-09-26 | Manufacture of photo semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5449087A true JPS5449087A (en) | 1979-04-18 |
Family
ID=14681556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11621077A Pending JPS5449087A (en) | 1977-09-26 | 1977-09-26 | Manufacture of photo semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5449087A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57207383A (en) * | 1981-06-15 | 1982-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Phototransistor |
-
1977
- 1977-09-26 JP JP11621077A patent/JPS5449087A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57207383A (en) * | 1981-06-15 | 1982-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Phototransistor |
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