JPS57207383A - Phototransistor - Google Patents

Phototransistor

Info

Publication number
JPS57207383A
JPS57207383A JP56092858A JP9285881A JPS57207383A JP S57207383 A JPS57207383 A JP S57207383A JP 56092858 A JP56092858 A JP 56092858A JP 9285881 A JP9285881 A JP 9285881A JP S57207383 A JPS57207383 A JP S57207383A
Authority
JP
Japan
Prior art keywords
region
layer
type
under
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56092858A
Other languages
Japanese (ja)
Inventor
Yoshihiko Mizushima
Yoshihito Amamiya
Shigeaki Yamashita
Osamu Asano
Yoshikazu Yama
Motoaki Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56092858A priority Critical patent/JPS57207383A/en
Publication of JPS57207383A publication Critical patent/JPS57207383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase the product of the speed of response of a photodiode and the gain band width of a transistor, and to obtain the phototransistor operating at high speed by making the width of a depletion layer just under an emitter region narrower than a depletion layer under a base region as a light receiving section. CONSTITUTION:An n<-> type layer 2 is grown onto an n<+> type Si substrate 1 in epitaxial form, an n<+> type region 10 reaching the substrate 1 from the surface is shaped to a predetermined region through diffusion or ion implantation an n<-> type layer is grown to the whole surface containing the region 10 again and unified with the layer 2 previously formed, and the thickness of the layer 2 is brought to prescribed one. The p type base region 3 is diffused and shaped to the surface layer section, and the small n<+> type emitter region 4 is formed to a region corresponding to the region 10 in the region 3. Accordingly, only the width of the depletion layer just under the region 4 is partially made narrower than the depletion layer under the region 3 as the light receiving section, and the speed of response is improved remarkably.
JP56092858A 1981-06-15 1981-06-15 Phototransistor Pending JPS57207383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092858A JPS57207383A (en) 1981-06-15 1981-06-15 Phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092858A JPS57207383A (en) 1981-06-15 1981-06-15 Phototransistor

Publications (1)

Publication Number Publication Date
JPS57207383A true JPS57207383A (en) 1982-12-20

Family

ID=14066123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092858A Pending JPS57207383A (en) 1981-06-15 1981-06-15 Phototransistor

Country Status (1)

Country Link
JP (1) JPS57207383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125970A (en) * 1982-01-22 1983-07-27 Nec Corp Solid-state image pickup device
US8350301B2 (en) 2009-08-07 2013-01-08 Hitachi, Ltd. Semiconductor photodiode device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449087A (en) * 1977-09-26 1979-04-18 Sharp Corp Manufacture of photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449087A (en) * 1977-09-26 1979-04-18 Sharp Corp Manufacture of photo semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125970A (en) * 1982-01-22 1983-07-27 Nec Corp Solid-state image pickup device
JPH0424870B2 (en) * 1982-01-22 1992-04-28 Nippon Electric Co
US8350301B2 (en) 2009-08-07 2013-01-08 Hitachi, Ltd. Semiconductor photodiode device and manufacturing method thereof

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