JPS5649581A - Preparation of hetero-junction light detector - Google Patents
Preparation of hetero-junction light detectorInfo
- Publication number
- JPS5649581A JPS5649581A JP12497579A JP12497579A JPS5649581A JP S5649581 A JPS5649581 A JP S5649581A JP 12497579 A JP12497579 A JP 12497579A JP 12497579 A JP12497579 A JP 12497579A JP S5649581 A JPS5649581 A JP S5649581A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- hill
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve reliability and reduce cost by a construction wherein a P-N jucntion and another one as a protective ring are formed with high reproducibility through a single process of continuous epitaxial growth and that of diffusion. CONSTITUTION:A circular hill 11' is formed by etching away the surface (100) of an N<+> type InP layer 11, and the hill is covered with an N type In0.79Ga0.21 As0.47P0.53 layer 12 and an N type InP layer 13 epitaxially. The layer 13 is further covered with an SiO2 film, while a Cd diffusion layer is provided in a region 13' above the hill 11' to form a P-N junction 16. An SiO2 layer 14' is again added, and a circular opening is made in the layer, then a P type ohmic electrode 17 is formed in a ring shape. Simultaneously, an N type ohmic electrode 18 is formed on the base of the substrate 11. Since the P-N junction is located near the substrate, a reverse bias, when it is applied, uniformly yields with the P-N junction above the substrate 11 without the influence of a peripheral junction. Such a construction as this makes it possible to improve the reliability of a light detector and reduce cost due to simple processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12497579A JPS5649581A (en) | 1979-09-28 | 1979-09-28 | Preparation of hetero-junction light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12497579A JPS5649581A (en) | 1979-09-28 | 1979-09-28 | Preparation of hetero-junction light detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649581A true JPS5649581A (en) | 1981-05-06 |
| JPS6244710B2 JPS6244710B2 (en) | 1987-09-22 |
Family
ID=14898839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12497579A Granted JPS5649581A (en) | 1979-09-28 | 1979-09-28 | Preparation of hetero-junction light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649581A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0163546A2 (en) * | 1984-05-31 | 1985-12-04 | Fujitsu Limited | Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained |
| US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
-
1979
- 1979-09-28 JP JP12497579A patent/JPS5649581A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0163546A2 (en) * | 1984-05-31 | 1985-12-04 | Fujitsu Limited | Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained |
| US4840916A (en) * | 1984-05-31 | 1989-06-20 | Fujitsu Limited | Process for fabricating an avalanche photodiode |
| US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244710B2 (en) | 1987-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5649581A (en) | Preparation of hetero-junction light detector | |
| JPS5642385A (en) | Hetero-structure semiconductor device | |
| JPS5513957A (en) | Semiconductor device | |
| JPS6451658A (en) | Semiconductor device | |
| JPS5534463A (en) | Avalanche photodiode | |
| JPS5726486A (en) | Manufacture of semiconductor device | |
| JPS57126172A (en) | Schottky barrier diode | |
| JPS54141596A (en) | Semiconductor device | |
| JPS5788782A (en) | Light emitting diode | |
| JPS5683082A (en) | Semiconductor light receiver | |
| JPS5613761A (en) | Preparation of semiconductor device | |
| JPS5710987A (en) | Silicon avalanche photo diode | |
| JPS57207383A (en) | Phototransistor | |
| JPS5599782A (en) | Manufacture of guard ring for semiconductor photodetector | |
| JPS5688390A (en) | Manufacture of semiconductor laser | |
| JPS54148486A (en) | Semiconductor device | |
| JPS57159072A (en) | Manufacture of avalanche photodiode | |
| JPS5681984A (en) | Semiconductor device | |
| JPS567485A (en) | Manufacturing of luminous element | |
| JPS55115377A (en) | Manufacture of silicon avalanche photodiode | |
| JPS55134970A (en) | Photofiring thyristor | |
| JPS55125684A (en) | Semiconductor photodetector element | |
| JPS5651883A (en) | Light receiving diode | |
| JPS5742176A (en) | Optical semiconductor element | |
| JPS5723277A (en) | Semiconductor light-receiving element and manufacture thereof |