JPS5710987A - Silicon avalanche photo diode - Google Patents

Silicon avalanche photo diode

Info

Publication number
JPS5710987A
JPS5710987A JP8699480A JP8699480A JPS5710987A JP S5710987 A JPS5710987 A JP S5710987A JP 8699480 A JP8699480 A JP 8699480A JP 8699480 A JP8699480 A JP 8699480A JP S5710987 A JPS5710987 A JP S5710987A
Authority
JP
Japan
Prior art keywords
type
polycrystal
layer
diffusion
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8699480A
Other languages
Japanese (ja)
Inventor
Seiichi Nagai
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8699480A priority Critical patent/JPS5710987A/en
Publication of JPS5710987A publication Critical patent/JPS5710987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To contrive complete planar of a P type side photo incident system by burying polycrystal Si doped with high density in mesa grooves by an N type impurity wherein a surrounding P type layer is formed into N type by consisting the polycrystal Si as a diffusion source to form an N<+> diffusion layer. CONSTITUTION:A P type epitaxial layer 2 is formed on an N<+> type single crystal Si substrate 1 to form a predetermined shaped insulating film 4 for etching mask and mesa grooves are formed by mesa etching. Next, polycrystal silicon 10 is formed while doping an N type impurity with high density. Next, the polycrystal Si being located except the mesa grooves is removed by lapping. Next, the diffusion of the N type impurity is generated from the polycrystal Si 10 by heat treatment and a surrounding P type layer 2 is formed into N type to form an N<+> type diffusion layer 8. Next, the insulating film 4 is selectively eliminated to form a P<+> diffusion layer 3, electrodes 6, and a light reflection-proof film 12.
JP8699480A 1980-06-23 1980-06-23 Silicon avalanche photo diode Pending JPS5710987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8699480A JPS5710987A (en) 1980-06-23 1980-06-23 Silicon avalanche photo diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8699480A JPS5710987A (en) 1980-06-23 1980-06-23 Silicon avalanche photo diode

Publications (1)

Publication Number Publication Date
JPS5710987A true JPS5710987A (en) 1982-01-20

Family

ID=13902419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8699480A Pending JPS5710987A (en) 1980-06-23 1980-06-23 Silicon avalanche photo diode

Country Status (1)

Country Link
JP (1) JPS5710987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823864A (en) * 1981-08-05 1983-02-12 Tomoegawa Paper Co Ltd Ink composition
EP0714117A2 (en) 1994-11-24 1996-05-29 Hamamatsu Photonics K.K. Photomultiplier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823864A (en) * 1981-08-05 1983-02-12 Tomoegawa Paper Co Ltd Ink composition
EP0714117A2 (en) 1994-11-24 1996-05-29 Hamamatsu Photonics K.K. Photomultiplier
US5654536A (en) * 1994-11-24 1997-08-05 Hamamatsu Photonics K.K. Photomultiplier having a multilayer semiconductor device
EP0714117A3 (en) * 1994-11-24 1998-03-04 Hamamatsu Photonics K.K. Photomultiplier

Similar Documents

Publication Publication Date Title
EP0068652B1 (en) Photo diodes
JPS5640275A (en) Preparation of semiconductor device
JPS5691478A (en) Manufacture of punch-through type diode
JPS54154977A (en) Semiconductor device and its manufacture
JPS5710987A (en) Silicon avalanche photo diode
JPS5717145A (en) Semiconductor device and manufacture therefor
JPS5617071A (en) Semiconductor device
JPS5513957A (en) Semiconductor device
JPS5694673A (en) Semiconductor junction capacity device and manufacture thereof
JPS54141596A (en) Semiconductor device
JPS55115377A (en) Manufacture of silicon avalanche photodiode
JPS5730380A (en) Optical semiconductor device
JPS5776860A (en) Semiconductor device and its manufacture
JPS55134963A (en) Composite semiconductor device and manufacture thereof
JPS5599782A (en) Manufacture of guard ring for semiconductor photodetector
JPS5533031A (en) Light-detecting semiconductor device
JPH0797654B2 (en) Method for manufacturing semiconductor device
JPS6482668A (en) Manufacture of bipolar transistor
JPS5568650A (en) Manufacturing method of semiconductor device
JPS54144885A (en) Manufacture for semiconductor device
JPS57143841A (en) Insulation separating composition
JPS5649581A (en) Preparation of hetero-junction light detector
GB1300768A (en) Improvements in or relating to semiconductor structures
JPS5491185A (en) Semiconductor divece
JPS56114368A (en) Manufacture of semiconductor ic device