JPS5730380A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS5730380A
JPS5730380A JP10415180A JP10415180A JPS5730380A JP S5730380 A JPS5730380 A JP S5730380A JP 10415180 A JP10415180 A JP 10415180A JP 10415180 A JP10415180 A JP 10415180A JP S5730380 A JPS5730380 A JP S5730380A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor device
ainp
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10415180A
Other languages
Japanese (ja)
Other versions
JPS6259472B2 (en
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10415180A priority Critical patent/JPS5730380A/en
Publication of JPS5730380A publication Critical patent/JPS5730380A/en
Publication of JPS6259472B2 publication Critical patent/JPS6259472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase the width of a depletion layer of an optical semiconductor device and to improve the photodetecting efficiency of the device by forming a P<+> type layer on an N<-> type In1-xGaxAs1-yPy 4 elements compound layer of low impurity layer having no miss-fitting dislocation. CONSTITUTION:In an optical semiconductor device, In1-xGaxAs1-yPy 4 elements compound layer 2 is laminated directly in contact with an InP substrate of an InP epitaxial layer 1, and a P<+> type layer 3, guard ring 4, P type side a electrode 5 and N type side electrode 6 are then formed. The 4 elements compound layer 2 has 0.1-0.3% of miss-fitting amount (a4element-aInP).100/aInP, where the lattice constant of the four elements compounds at ambient temperature in a perpendicular direction to the surface of the substrate is represented by a4element and the lattice constant of the InP at ambient temperature in the perpendicular direction to the surface of the substrate is represented by aInP. The layer 2 is formed in a thickess larger than 5mum.
JP10415180A 1980-07-29 1980-07-29 Optical semiconductor device Granted JPS5730380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10415180A JPS5730380A (en) 1980-07-29 1980-07-29 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10415180A JPS5730380A (en) 1980-07-29 1980-07-29 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS5730380A true JPS5730380A (en) 1982-02-18
JPS6259472B2 JPS6259472B2 (en) 1987-12-11

Family

ID=14373064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10415180A Granted JPS5730380A (en) 1980-07-29 1980-07-29 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172381A (en) * 1984-12-22 1986-08-04 Fujitsu Ltd Inp group compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172381A (en) * 1984-12-22 1986-08-04 Fujitsu Ltd Inp group compound semiconductor device

Also Published As

Publication number Publication date
JPS6259472B2 (en) 1987-12-11

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