JPS57204181A - Gaas solar battery and manufacture thereof - Google Patents
Gaas solar battery and manufacture thereofInfo
- Publication number
- JPS57204181A JPS57204181A JP56090110A JP9011081A JPS57204181A JP S57204181 A JPS57204181 A JP S57204181A JP 56090110 A JP56090110 A JP 56090110A JP 9011081 A JP9011081 A JP 9011081A JP S57204181 A JPS57204181 A JP S57204181A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- type
- layer
- manufacture
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
PURPOSE:To obtain a GaAs solar battery with high photoelectric conversion efficiency strong to electron rays and manufacture thereof, by optimizing the carrier densities and thicknesses of a substrate and each layer in Ga1-xAlx As-GaAs hetero junction structures. CONSTITUTION:The N type GaAs substrate having carrier density of (1-20)X 10<16>/cm<3>, P type GaAs layer thereon with the thickness 0.6mum or less and P type Ga1-xAlxAs (0<X<1) layer thereon with the thickness 1mum or less ore provided. In manufacturing, crystal growing solution added with the solution of a ternary compound semiconductor, e.g. Ga, Al, As, GaAs and a II element, e.g. Zn as impurity to determine P type conductive type is made to contact this N type GaAs substrate to epitaxial-grow a P type GaAs layer further with a Ga1-xAlxAs (0<X<1) layer formed thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56090110A JPS57204181A (en) | 1981-06-09 | 1981-06-09 | Gaas solar battery and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56090110A JPS57204181A (en) | 1981-06-09 | 1981-06-09 | Gaas solar battery and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57204181A true JPS57204181A (en) | 1982-12-14 |
Family
ID=13989376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56090110A Pending JPS57204181A (en) | 1981-06-09 | 1981-06-09 | Gaas solar battery and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57204181A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61188974A (en) * | 1985-02-15 | 1986-08-22 | Sharp Corp | Gaas solar cell |
JPS63127162U (en) * | 1987-02-10 | 1988-08-19 | ||
JPH0656896B2 (en) * | 1986-11-04 | 1994-07-27 | スペクトロラブ・インコーポレーテッド | Solar cell with improved electrical connection |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140891A (en) * | 1974-08-05 | 1976-04-06 | Nasa |
-
1981
- 1981-06-09 JP JP56090110A patent/JPS57204181A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140891A (en) * | 1974-08-05 | 1976-04-06 | Nasa |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61188974A (en) * | 1985-02-15 | 1986-08-22 | Sharp Corp | Gaas solar cell |
JPH0656896B2 (en) * | 1986-11-04 | 1994-07-27 | スペクトロラブ・インコーポレーテッド | Solar cell with improved electrical connection |
JPS63127162U (en) * | 1987-02-10 | 1988-08-19 |
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