JPS5694673A - Semiconductor junction capacity device and manufacture thereof - Google Patents

Semiconductor junction capacity device and manufacture thereof

Info

Publication number
JPS5694673A
JPS5694673A JP16933179A JP16933179A JPS5694673A JP S5694673 A JPS5694673 A JP S5694673A JP 16933179 A JP16933179 A JP 16933179A JP 16933179 A JP16933179 A JP 16933179A JP S5694673 A JPS5694673 A JP S5694673A
Authority
JP
Japan
Prior art keywords
region
layer
film
type
struck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16933179A
Other languages
Japanese (ja)
Other versions
JPS6327867B2 (en
Inventor
Hideo Tanbara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16933179A priority Critical patent/JPS5694673A/en
Publication of JPS5694673A publication Critical patent/JPS5694673A/en
Publication of JPS6327867B2 publication Critical patent/JPS6327867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Abstract

PURPOSE:To obtain a vari-cap with little floating capacity by nullifyig or reducing to the least the lateral protrusion of an inverse-continuity-type region when a diffusion region of equal electroform and of high density is provided within a semiconductor layer of low impurity density and the shallow inverse-continuity-type region is formed there. CONSTITUTION:An n<-> type layer 2 is made to grow epitaxially on an n<+> type Si substrate 1, the whole surface is covered with an SiO2 film 3 and an window having a prescribed angle is opened by photoetching of the film 3. Next, donor impurity ions of P or As or the like are struck therein and thereby an n<+> type region 4 is formed in the layer 2. On the occasion, the ions are struck not only in the surface of the region 4 but also in the lateral surface of the film 3, whereby a damage layer 7 is to be formed. Thus, by utilizing the high etching speed of the damage layer 7, the layer 7 is removed rapidly by using a nonacid etching liquid and thereby the expansion of the window is reduced as much as possible. After that, B diffusion is performed with the film 3' after etching being left as it is and thus the shallow p<+> region 6' with little amount of protrusion outside the region 4 is obtained as a varistor with little floating capacity.
JP16933179A 1979-12-27 1979-12-27 Semiconductor junction capacity device and manufacture thereof Granted JPS5694673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16933179A JPS5694673A (en) 1979-12-27 1979-12-27 Semiconductor junction capacity device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16933179A JPS5694673A (en) 1979-12-27 1979-12-27 Semiconductor junction capacity device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5694673A true JPS5694673A (en) 1981-07-31
JPS6327867B2 JPS6327867B2 (en) 1988-06-06

Family

ID=15884560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16933179A Granted JPS5694673A (en) 1979-12-27 1979-12-27 Semiconductor junction capacity device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5694673A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896774A (en) * 1981-12-04 1983-06-08 Mitsubishi Electric Corp Manufacture of super-stepped type junction diode
JPS5976422A (en) * 1982-10-26 1984-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5024955A (en) * 1989-01-19 1991-06-18 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826480A (en) * 1971-08-11 1973-04-07
JPS5269266A (en) * 1975-12-08 1977-06-08 Fujitsu Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826480A (en) * 1971-08-11 1973-04-07
JPS5269266A (en) * 1975-12-08 1977-06-08 Fujitsu Ltd Production of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896774A (en) * 1981-12-04 1983-06-08 Mitsubishi Electric Corp Manufacture of super-stepped type junction diode
JPS5976422A (en) * 1982-10-26 1984-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5024955A (en) * 1989-01-19 1991-06-18 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range

Also Published As

Publication number Publication date
JPS6327867B2 (en) 1988-06-06

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