JPS54144885A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54144885A
JPS54144885A JP5344678A JP5344678A JPS54144885A JP S54144885 A JPS54144885 A JP S54144885A JP 5344678 A JP5344678 A JP 5344678A JP 5344678 A JP5344678 A JP 5344678A JP S54144885 A JPS54144885 A JP S54144885A
Authority
JP
Japan
Prior art keywords
film
layer
substrate
sio
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5344678A
Other languages
Japanese (ja)
Other versions
JPS6043653B2 (en
Inventor
Katsushige Shomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5344678A priority Critical patent/JPS6043653B2/en
Publication of JPS54144885A publication Critical patent/JPS54144885A/en
Publication of JPS6043653B2 publication Critical patent/JPS6043653B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To increase the life time and the PN junction dielectric strength by blocking the invasion to the substrate for unnecessary impurity, through the coating of SiO2 film which can transmit Ga on the surface of semiconductor and through diffusion of Ga via this in the substrate.
CONSTITUTION: The N type Si wafer 11 is oxidized at a high temperature to grow the SiO2 film 12 on the both sides of front and back, and it is contained on the quartz boat 18 while being implanted in the quartz tube 13. Further, the dummy wafer 19 attaching Ga being diffusion source apart from this at one side, and the Si plate 16 attached with the Ga 17 of the diffusion source located under the boat 18 are provided. Further, heat treatment is made and the surface concentration of the layers 14 and 15 is made higher concentration of about 2×1019cm-3. After that, the film 12 at the layer 15 is protected with the tape 19 of acid proof, the film 12 at the layer 14 is removed by etching, the tape 19 is removed, the surface layer of the layer 14 is lightly chemical-etched by taking the film 12 exposed as the protector to cause suitable substrate suitable for thyristors.
COPYRIGHT: (C)1979,JPO&Japio
JP5344678A 1978-05-04 1978-05-04 Manufacturing method of semiconductor device Expired JPS6043653B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5344678A JPS6043653B2 (en) 1978-05-04 1978-05-04 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5344678A JPS6043653B2 (en) 1978-05-04 1978-05-04 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54144885A true JPS54144885A (en) 1979-11-12
JPS6043653B2 JPS6043653B2 (en) 1985-09-30

Family

ID=12943068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5344678A Expired JPS6043653B2 (en) 1978-05-04 1978-05-04 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6043653B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03105363A (en) * 1989-09-19 1991-05-02 Mita Ind Co Ltd Conveying unit for image producing machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03105363A (en) * 1989-09-19 1991-05-02 Mita Ind Co Ltd Conveying unit for image producing machine

Also Published As

Publication number Publication date
JPS6043653B2 (en) 1985-09-30

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