JPS54144886A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54144886A
JPS54144886A JP5344778A JP5344778A JPS54144886A JP S54144886 A JPS54144886 A JP S54144886A JP 5344778 A JP5344778 A JP 5344778A JP 5344778 A JP5344778 A JP 5344778A JP S54144886 A JPS54144886 A JP S54144886A
Authority
JP
Japan
Prior art keywords
region
diffusion
substrate
type
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5344778A
Other languages
Japanese (ja)
Inventor
Katsushige Shomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5344778A priority Critical patent/JPS54144886A/en
Publication of JPS54144886A publication Critical patent/JPS54144886A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To offer the thyristor substrate by obtaining the region higher in surface impurity density, through the coating of the oxide film on the semiconductor substrate, formation of a give region with the provision of opening, and formation of Ga by diffusion through the oxide film at the both sides of it.
CONSTITUTION: The P type layers 2 and 3 are formed by diffusion at the both sides of the N type Si substrate 1 for the front and back side, and the both sides are coated with the SiO2 film 4. Next, opening is provided for the film 4 at the surface, the N+ type region 5 is formed by diffusion in the layer 2, to produce thin SiO2 4' on the region 5. Further, the substrate 1 with this constitution is enclosed with Ga being the diffusion source in the quartz tube 11, and the shallow P+ type region 12 of which concentration is 2 × 1019 cm-3 in the layer 2 at the both sides of the region 5 with heat treatment, is formed by diffusion through the film 4. In this case, since the region 5 is of high impurity concentration, no P type alteration is caused. Thus, the region 12 excellent in the region 12 of ohmic contactness used for the anode, cathode and gate is provided to establish the substrate suitable for thyristors.
COPYRIGHT: (C)1979,JPO&Japio
JP5344778A 1978-05-04 1978-05-04 Manufacture for semiconductor device Pending JPS54144886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5344778A JPS54144886A (en) 1978-05-04 1978-05-04 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5344778A JPS54144886A (en) 1978-05-04 1978-05-04 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54144886A true JPS54144886A (en) 1979-11-12

Family

ID=12943097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5344778A Pending JPS54144886A (en) 1978-05-04 1978-05-04 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54144886A (en)

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