JPS558077A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS558077A JPS558077A JP8116778A JP8116778A JPS558077A JP S558077 A JPS558077 A JP S558077A JP 8116778 A JP8116778 A JP 8116778A JP 8116778 A JP8116778 A JP 8116778A JP S558077 A JPS558077 A JP S558077A
- Authority
- JP
- Japan
- Prior art keywords
- range
- film
- type
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve semiconductors in high frequency characteristic by using Pt- Si allly and W or Mo as the materials of the first electrode to be provided at P-type semiconductor range and of the second electrode to be provided at an N+-type range.
CONSTITUTION: A P-type base range 2 is diffusedly formed on an N-type Si substrate 1, the whole surface of said substrate 1 is covered with insulating film 7, an opening H1 is provided at said range 2, an N+-type emitter range 3 is diffusedly formed at said range 2, and at the same time thin oxidized film 25 is generated at surface. Next, an opening H2 is made in the film 7 present at said range 2 on the both hands of said range 3, Pt film is deposited over the whole surface of said substrate 1 and subjected to heat treatment, and Pt-Si alloy base electrode 5 is formed on the surface of said range 2. Thereafter, the unrequired portion of Pt film remaining on said films 7 and 25 is removed by aqua regia, said film 25 is removed, and an emitter electrode of dipping type having a barrier effect is formed such as W and Mo is formed on the surface of said range 3 exposed, and a corrector electrode is deposited on the reverse side of said substrate 1. Thereby, the leak current between first and second electrodes is decreased and a fine pattern is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8116778A JPS558077A (en) | 1978-07-03 | 1978-07-03 | Semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8116778A JPS558077A (en) | 1978-07-03 | 1978-07-03 | Semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS558077A true JPS558077A (en) | 1980-01-21 |
Family
ID=13738894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8116778A Pending JPS558077A (en) | 1978-07-03 | 1978-07-03 | Semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS558077A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387832A (en) * | 1986-09-30 | 1988-04-19 | Nec Corp | Cross connection system for digital transmission |
JPH01101747A (en) * | 1987-10-14 | 1989-04-19 | Nec Corp | Dsi interface circuit for digital cross connection |
-
1978
- 1978-07-03 JP JP8116778A patent/JPS558077A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387832A (en) * | 1986-09-30 | 1988-04-19 | Nec Corp | Cross connection system for digital transmission |
JPH01101747A (en) * | 1987-10-14 | 1989-04-19 | Nec Corp | Dsi interface circuit for digital cross connection |
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