JPS558077A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS558077A
JPS558077A JP8116778A JP8116778A JPS558077A JP S558077 A JPS558077 A JP S558077A JP 8116778 A JP8116778 A JP 8116778A JP 8116778 A JP8116778 A JP 8116778A JP S558077 A JPS558077 A JP S558077A
Authority
JP
Japan
Prior art keywords
range
film
type
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8116778A
Other languages
Japanese (ja)
Inventor
Yukio Higaki
Mari Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8116778A priority Critical patent/JPS558077A/en
Publication of JPS558077A publication Critical patent/JPS558077A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve semiconductors in high frequency characteristic by using Pt- Si allly and W or Mo as the materials of the first electrode to be provided at P-type semiconductor range and of the second electrode to be provided at an N+-type range.
CONSTITUTION: A P-type base range 2 is diffusedly formed on an N-type Si substrate 1, the whole surface of said substrate 1 is covered with insulating film 7, an opening H1 is provided at said range 2, an N+-type emitter range 3 is diffusedly formed at said range 2, and at the same time thin oxidized film 25 is generated at surface. Next, an opening H2 is made in the film 7 present at said range 2 on the both hands of said range 3, Pt film is deposited over the whole surface of said substrate 1 and subjected to heat treatment, and Pt-Si alloy base electrode 5 is formed on the surface of said range 2. Thereafter, the unrequired portion of Pt film remaining on said films 7 and 25 is removed by aqua regia, said film 25 is removed, and an emitter electrode of dipping type having a barrier effect is formed such as W and Mo is formed on the surface of said range 3 exposed, and a corrector electrode is deposited on the reverse side of said substrate 1. Thereby, the leak current between first and second electrodes is decreased and a fine pattern is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP8116778A 1978-07-03 1978-07-03 Semiconductor Pending JPS558077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8116778A JPS558077A (en) 1978-07-03 1978-07-03 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8116778A JPS558077A (en) 1978-07-03 1978-07-03 Semiconductor

Publications (1)

Publication Number Publication Date
JPS558077A true JPS558077A (en) 1980-01-21

Family

ID=13738894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8116778A Pending JPS558077A (en) 1978-07-03 1978-07-03 Semiconductor

Country Status (1)

Country Link
JP (1) JPS558077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387832A (en) * 1986-09-30 1988-04-19 Nec Corp Cross connection system for digital transmission
JPH01101747A (en) * 1987-10-14 1989-04-19 Nec Corp Dsi interface circuit for digital cross connection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387832A (en) * 1986-09-30 1988-04-19 Nec Corp Cross connection system for digital transmission
JPH01101747A (en) * 1987-10-14 1989-04-19 Nec Corp Dsi interface circuit for digital cross connection

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