JPS5539631A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5539631A
JPS5539631A JP11250078A JP11250078A JPS5539631A JP S5539631 A JPS5539631 A JP S5539631A JP 11250078 A JP11250078 A JP 11250078A JP 11250078 A JP11250078 A JP 11250078A JP S5539631 A JPS5539631 A JP S5539631A
Authority
JP
Japan
Prior art keywords
sio
layer
electrode
substrate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11250078A
Other languages
Japanese (ja)
Inventor
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11250078A priority Critical patent/JPS5539631A/en
Publication of JPS5539631A publication Critical patent/JPS5539631A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a high withstand voltage semiconductor through the process consisting of covering the p-n junction ends of Si substrate surface with SiO2, letting out an Al electrode over said SiO2, and providing O-atom containing Si layer (SIPOS) under said SiO2 a given distance outward of said p-n junction ends.
CONSTITUTION: The end portions of p-n junction 3 are covered with SiO2 25, an Al electrode 16 is extrusive, and SIPOS 24 is in close contact with an Si substrate 1 under said SiO2 25 outside the shield range of said electrode 16. The O content of said layer 24 is fixed at 2W45atom%. Less than 2 atom% is equal to that of pure poly-Si, and more than 45atom% to that of SiO2. Thereby, airlacking layer 17 expands outward, and the end portions thereof sufficiently expands onto the layer 24 side where no charge induction occurs so that high withstand voltage value can be obtained. Thus-obtained semiconductor is stable against esternal electric field since neither charge induction nor fixation occurs thanks to the close contact of said layer 24 with said substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
JP11250078A 1978-09-13 1978-09-13 Semiconductor device Pending JPS5539631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11250078A JPS5539631A (en) 1978-09-13 1978-09-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11250078A JPS5539631A (en) 1978-09-13 1978-09-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5539631A true JPS5539631A (en) 1980-03-19

Family

ID=14588199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11250078A Pending JPS5539631A (en) 1978-09-13 1978-09-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5539631A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122532A (en) * 1981-01-22 1982-07-30 Mitsubishi Electric Corp Semiconductor device
JPS61248482A (en) * 1985-04-25 1986-11-05 Nippon Denso Co Ltd Semiconductor strain detector
US20100062599A1 (en) * 2008-09-05 2010-03-11 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122532A (en) * 1981-01-22 1982-07-30 Mitsubishi Electric Corp Semiconductor device
JPS61248482A (en) * 1985-04-25 1986-11-05 Nippon Denso Co Ltd Semiconductor strain detector
US20100062599A1 (en) * 2008-09-05 2010-03-11 Mitsubishi Electric Corporation Method for manufacturing semiconductor device
US8377832B2 (en) * 2008-09-05 2013-02-19 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

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