JPS5676537A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5676537A
JPS5676537A JP15341979A JP15341979A JPS5676537A JP S5676537 A JPS5676537 A JP S5676537A JP 15341979 A JP15341979 A JP 15341979A JP 15341979 A JP15341979 A JP 15341979A JP S5676537 A JPS5676537 A JP S5676537A
Authority
JP
Japan
Prior art keywords
layer
insulating film
amorphous
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15341979A
Other languages
Japanese (ja)
Other versions
JPS6211781B2 (en
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15341979A priority Critical patent/JPS5676537A/en
Publication of JPS5676537A publication Critical patent/JPS5676537A/en
Publication of JPS6211781B2 publication Critical patent/JPS6211781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To readily form an insulating film having high insulation by forming an amorphous semiconductor layer on a semiconductor substrate and oxidizing the amorphous semiconductor layer. CONSTITUTION:The amorphous Si layer 4 is coated on a polycrystalline Si wiring layer 3 formed on a semiconductor substrate 1 through a field insulating film 2, and the layer 4 is converted into an SiO2 film through an oxidation (preferably at 900- 1,000 deg.C). This can provide an insulating film having high insulating withstand voltage. Since the layer 4 can be formed by low temperature oxidation, the substrate can be improved in yield and in its electric characteristics without imparting damage thereto.
JP15341979A 1979-11-27 1979-11-27 Manufacture of semiconductor device Granted JPS5676537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15341979A JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15341979A JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5676537A true JPS5676537A (en) 1981-06-24
JPS6211781B2 JPS6211781B2 (en) 1987-03-14

Family

ID=15562082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15341979A Granted JPS5676537A (en) 1979-11-27 1979-11-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5676537A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878465A (en) * 1981-11-04 1983-05-12 Toshiba Corp Manufacture of semiconductor device
FR2536208A1 (en) * 1982-11-12 1984-05-18 Rca Corp METHOD FOR FORMING SILICON BIOXIDE AND SEMICONDUCTOR DEVICE WITH SILICON BIOXIDE LAYER
JPS59127841A (en) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS59184547A (en) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
JPS63502470A (en) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− Method for manufacturing a device having a thin dielectric layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504314A (en) * 1973-05-17 1975-01-17
JPS5436181A (en) * 1977-08-26 1979-03-16 Fujitsu Ltd Manufacture for semiconductor device
JPS54128678A (en) * 1978-03-30 1979-10-05 Toshiba Corp Forming method of insulation film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504314A (en) * 1973-05-17 1975-01-17
JPS5436181A (en) * 1977-08-26 1979-03-16 Fujitsu Ltd Manufacture for semiconductor device
JPS54128678A (en) * 1978-03-30 1979-10-05 Toshiba Corp Forming method of insulation film

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878465A (en) * 1981-11-04 1983-05-12 Toshiba Corp Manufacture of semiconductor device
FR2536208A1 (en) * 1982-11-12 1984-05-18 Rca Corp METHOD FOR FORMING SILICON BIOXIDE AND SEMICONDUCTOR DEVICE WITH SILICON BIOXIDE LAYER
JPS59103347A (en) * 1982-11-12 1984-06-14 ゼネラル・エレクトリック・カンパニイ Semiconductor device with insulated dielectric layer of silicon dioxide on silicon layer and method of producing same
JPS59127841A (en) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPH0228250B2 (en) * 1983-01-12 1990-06-22 Nippon Telegraph & Telephone
JPS59184547A (en) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
JPS63502470A (en) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− Method for manufacturing a device having a thin dielectric layer

Also Published As

Publication number Publication date
JPS6211781B2 (en) 1987-03-14

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