JPS54159885A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54159885A
JPS54159885A JP6932678A JP6932678A JPS54159885A JP S54159885 A JPS54159885 A JP S54159885A JP 6932678 A JP6932678 A JP 6932678A JP 6932678 A JP6932678 A JP 6932678A JP S54159885 A JPS54159885 A JP S54159885A
Authority
JP
Japan
Prior art keywords
poly
crystal
film
sio
electrode wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6932678A
Other languages
Japanese (ja)
Inventor
Juro Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6932678A priority Critical patent/JPS54159885A/en
Publication of JPS54159885A publication Critical patent/JPS54159885A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an inter-wiring insulating film where short-circuit between electrodes does not exist and dielectric strength is high even if the upper electrode wiring and the lower electrode wiring are semiconductors such as poly-crystal Si together.
CONSTITUTION: Lower electrode wiring 5 is formed with poly-crystal Si on gate and field SiO2 film 3 on the surface of P-type Si substrate 1, and p of n-type impurity is added at the forming time of n-type source and drain region 2. First, poly- crystal Si is oxidized by heat treatment, and SiO2 film 53 is formed on poly-crystal Si. Next, poly-crystal Si film 71 is formed by adhesion. Next, poly-crystal Si film is formed again by adhesion and is converted to a SiO2 film by thermal oxidation to form SiO2 film 7, and after that, poly-crystal Si 8 of the upper electrode wiring is formed.
COPYRIGHT: (C)1979,JPO&Japio
JP6932678A 1978-06-07 1978-06-07 Production of semiconductor device Pending JPS54159885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6932678A JPS54159885A (en) 1978-06-07 1978-06-07 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6932678A JPS54159885A (en) 1978-06-07 1978-06-07 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54159885A true JPS54159885A (en) 1979-12-18

Family

ID=13399306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6932678A Pending JPS54159885A (en) 1978-06-07 1978-06-07 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54159885A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590292A (en) * 1991-09-30 1993-04-09 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590292A (en) * 1991-09-30 1993-04-09 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and manufacture thereof

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