JPS54159885A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54159885A JPS54159885A JP6932678A JP6932678A JPS54159885A JP S54159885 A JPS54159885 A JP S54159885A JP 6932678 A JP6932678 A JP 6932678A JP 6932678 A JP6932678 A JP 6932678A JP S54159885 A JPS54159885 A JP S54159885A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- crystal
- film
- sio
- electrode wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an inter-wiring insulating film where short-circuit between electrodes does not exist and dielectric strength is high even if the upper electrode wiring and the lower electrode wiring are semiconductors such as poly-crystal Si together.
CONSTITUTION: Lower electrode wiring 5 is formed with poly-crystal Si on gate and field SiO2 film 3 on the surface of P-type Si substrate 1, and p of n-type impurity is added at the forming time of n-type source and drain region 2. First, poly- crystal Si is oxidized by heat treatment, and SiO2 film 53 is formed on poly-crystal Si. Next, poly-crystal Si film 71 is formed by adhesion. Next, poly-crystal Si film is formed again by adhesion and is converted to a SiO2 film by thermal oxidation to form SiO2 film 7, and after that, poly-crystal Si 8 of the upper electrode wiring is formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6932678A JPS54159885A (en) | 1978-06-07 | 1978-06-07 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6932678A JPS54159885A (en) | 1978-06-07 | 1978-06-07 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54159885A true JPS54159885A (en) | 1979-12-18 |
Family
ID=13399306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6932678A Pending JPS54159885A (en) | 1978-06-07 | 1978-06-07 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54159885A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590292A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
-
1978
- 1978-06-07 JP JP6932678A patent/JPS54159885A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590292A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
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