JPS5563859A - Field-effect transistor integrated circuit - Google Patents

Field-effect transistor integrated circuit

Info

Publication number
JPS5563859A
JPS5563859A JP13752578A JP13752578A JPS5563859A JP S5563859 A JPS5563859 A JP S5563859A JP 13752578 A JP13752578 A JP 13752578A JP 13752578 A JP13752578 A JP 13752578A JP S5563859 A JPS5563859 A JP S5563859A
Authority
JP
Japan
Prior art keywords
field
effect transistor
integrated circuit
electrodes
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13752578A
Other languages
Japanese (ja)
Other versions
JPS6211512B2 (en
Inventor
Katsuhiko Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13752578A priority Critical patent/JPS5563859A/en
Publication of JPS5563859A publication Critical patent/JPS5563859A/en
Publication of JPS6211512B2 publication Critical patent/JPS6211512B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To raise the speed of operation and simplify the process of manufacture, by setting the distance between the electrodes of a load resistor of a load-resistance- type field-effect transistor at such a value that an electric field not lower than an intensity which saturates the carrier drift velocity is applied to a semiconductor between the electrodes.
CONSTITUTION: An integrated circuit comprises a field-effect transistor 2 and a load resistor 17 connected in series therewith. The load resistor 17 has ohmic electrodes 18, 19 and is made of a GaAs semiconductor. The distance L2 between the electrodes is so shortened that a strong electric field not lower than an intensity (3kV/ cm) which saturates the carrier drift velocity is applied to the semiconductor. The gate width of the resistor 17 is made smaller than that W1 of the field-effect transistor 2 and the resistor 17 is provided with a constant-current characteristic to raise the operating speed of the inverter. The process of manufacturing the integrated circuit is not complicated.
COPYRIGHT: (C)1980,JPO&Japio
JP13752578A 1978-11-08 1978-11-08 Field-effect transistor integrated circuit Granted JPS5563859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13752578A JPS5563859A (en) 1978-11-08 1978-11-08 Field-effect transistor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13752578A JPS5563859A (en) 1978-11-08 1978-11-08 Field-effect transistor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5563859A true JPS5563859A (en) 1980-05-14
JPS6211512B2 JPS6211512B2 (en) 1987-03-12

Family

ID=15200707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13752578A Granted JPS5563859A (en) 1978-11-08 1978-11-08 Field-effect transistor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5563859A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS55134955A (en) * 1979-04-09 1980-10-21 Nec Corp Gaas integrated circuit
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JPS63311752A (en) * 1987-06-15 1988-12-20 Matsushita Electronics Corp Semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS6348196B2 (en) * 1979-02-13 1988-09-28 Tomuson Sa
JPS55134955A (en) * 1979-04-09 1980-10-21 Nec Corp Gaas integrated circuit
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JPS63311752A (en) * 1987-06-15 1988-12-20 Matsushita Electronics Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6211512B2 (en) 1987-03-12

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