JPS5335482A - Bipolar semiconductor integrated circuit - Google Patents
Bipolar semiconductor integrated circuitInfo
- Publication number
- JPS5335482A JPS5335482A JP11007876A JP11007876A JPS5335482A JP S5335482 A JPS5335482 A JP S5335482A JP 11007876 A JP11007876 A JP 11007876A JP 11007876 A JP11007876 A JP 11007876A JP S5335482 A JPS5335482 A JP S5335482A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- bipolar semiconductor
- bipolar transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:In the circuit which has I<2>L and a bipolar transistor compatibly, the base width of the transistor of an I<2>L circuit element and the bipolar transistor is shortened by a simple course, so that dielectric strength of the bipolar transistor can be improved and a reverse operation current amplification factor of the I<2>L transtransistor can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11007876A JPS5335482A (en) | 1976-09-14 | 1976-09-14 | Bipolar semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11007876A JPS5335482A (en) | 1976-09-14 | 1976-09-14 | Bipolar semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5335482A true JPS5335482A (en) | 1978-04-01 |
Family
ID=14526464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11007876A Pending JPS5335482A (en) | 1976-09-14 | 1976-09-14 | Bipolar semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5335482A (en) |
-
1976
- 1976-09-14 JP JP11007876A patent/JPS5335482A/en active Pending
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