JPS5352376A - Production of field effect type semiconductor device - Google Patents

Production of field effect type semiconductor device

Info

Publication number
JPS5352376A
JPS5352376A JP12721176A JP12721176A JPS5352376A JP S5352376 A JPS5352376 A JP S5352376A JP 12721176 A JP12721176 A JP 12721176A JP 12721176 A JP12721176 A JP 12721176A JP S5352376 A JPS5352376 A JP S5352376A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12721176A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12721176A priority Critical patent/JPS5352376A/en
Publication of JPS5352376A publication Critical patent/JPS5352376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:Substrate effect is lowered and the variation in threshold voltage is prevented by lowering the impurity concentration of the substrate.
JP12721176A 1976-10-25 1976-10-25 Production of field effect type semiconductor device Pending JPS5352376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12721176A JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12721176A JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58157812A Division JPS5956758A (en) 1983-08-31 1983-08-31 Manufacture of field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5352376A true JPS5352376A (en) 1978-05-12

Family

ID=14954462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12721176A Pending JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5352376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586177A (en) * 1981-06-29 1983-01-13 インテル・コ−ポレ−シヨン Method of producing metal-oxide-semiconductor (mos)integrated circuit on silicon substrate
JPS59214253A (en) * 1983-05-20 1984-12-04 Matsushita Electronics Corp Manufacture of complementary mos integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586177A (en) * 1981-06-29 1983-01-13 インテル・コ−ポレ−シヨン Method of producing metal-oxide-semiconductor (mos)integrated circuit on silicon substrate
JPH0568854B2 (en) * 1981-06-29 1993-09-29 Intel Corp
JPS59214253A (en) * 1983-05-20 1984-12-04 Matsushita Electronics Corp Manufacture of complementary mos integrated circuit
JPH0329185B2 (en) * 1983-05-20 1991-04-23 Matsushita Electronics Corp

Similar Documents

Publication Publication Date Title
JPS51135373A (en) Semiconductor device
JPS5222480A (en) Insulating gate field effect transistor
JPS5316581A (en) Insulated gate type field effect transistor
JPS5227355A (en) Diffusion layer formation method
JPS5352376A (en) Production of field effect type semiconductor device
JPS5382179A (en) Field effect transistor
JPS5376678A (en) Semiconductor device
JPS5286084A (en) Field effect transistor
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5338271A (en) Semiconductor device
JPS5214388A (en) Process for complementary insulated gate semiconductor integrated circuit device
JPS5263686A (en) Non-voltatile semiconductor memory device
JPS5332681A (en) Semiconductor device
JPS5331978A (en) Production of complementary field effect semiconductor device
JPS5312280A (en) Semiconductor device and its production
JPS5286086A (en) Field effect transistor
JPS5277680A (en) Semiconductor integrated circuit
JPS52136583A (en) Mos type semiconductor device
JPS5370676A (en) Production of semiconductor element
JPS52100878A (en) Field effect transistor
JPS5320862A (en) Production of semiconductor device
JPS5322383A (en) Iil simiconductor device
JPS53108379A (en) Manufacture of semiconductor device
JPS5324285A (en) Semiconductor device